Logic circuit and semiconductor device

ABSTRACT

In a logic circuit where clock gating is performed, the standby power is reduced or malfunction is suppressed. The logic circuit includes a transistor which is in an off state where a potential difference exists between a source terminal and a drain terminal over a period during which a clock signal is not supplied. A channel formation region of the transistor is formed using an oxide semiconductor in which the hydrogen concentration is reduced. Specifically, the hydrogen concentration of the oxide semiconductor is 5×10 19  (atoms/cm 3 ) or lower. Thus, leakage current of the transistor can be reduced. As a result, in the logic circuit, reduction in standby power and suppression of malfunction can be achieved.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.12/912,397, filed Oct. 26, 2010, now allowed, which claims the benefitof a foreign priority application filed in Japan as Serial No.2009-250415 on Oct. 30, 2009, both of which are incorporated byreference.

TECHNICAL FIELD

The present invention relates to a logic circuit, particularly, a logiccircuit including a transistor in which a channel formation region isformed using an oxide semiconductor. The present invention also relatesto a semiconductor device including the logic circuit.

Note that a semiconductor device in this specification refers to alldevices which can function by utilizing semiconductor characteristics,and electro-optical devices, semiconductor circuits, and electronicappliances are all semiconductor devices.

BACKGROUND ART

In a general circuit including transistors manufactured by using a Siwafer or SOI (silicon on insulator), as the operation voltage is reducedby progress of microfabrication, consumed power is reduced.

Consumed power is a sum of dynamic power and static power (hereinafter,also referred to as standby power): the dynamic power is power consumedmainly by charge and discharge of the gate capacitor of transistors andthe parasitic capacitor formed with wirings connecting transistors andcircuit blocks, and the like; the static power is power consumed whencircuits do not operate.

As one of methods for reducing the consumed power, there is a techniquecalled clock gating (for example, see Patent Document 1). Clock gatingis a technique by which supply of a clock signal to a circuit is stoppedin a period during which the circuit does not operate. By the method,the power consumed in parasitic capacitor of wirings supplied with aclock signal or the like can be reduced.

REFERENCE

-   [Patent Document 1] Japanese Published Patent Application No.    2008-219882

DISCLOSURE OF INVENTION

Standby power is generally classified into power consumed by a circuitwhich does not operate (hereinafter, referred to as a non-operatingcircuit) and power consumed by leakage current (which is in general, acurrent flowing between source and drain when the voltage flowingbetween gate and source is 0 V) of a transistor.

By the above-described clock gating, dynamic power consumed can bereduced, but the static power consumed due to leakage current cannot bereduced. Note that the dynamic power consumed in the non-operatingcircuit includes power consumed due to charge and discharge of parasiticcapacitor formed by wirings to which a clock signal is supplied.Further, in the circuit where clock gating is performed, the state of anelement included in the non-operating circuit is held. Thus, powerconsumed due to the leakage current of the transistor accounts for alarge percent of the standby power. In addition, the probability ofmalfunction of the logic circuit, caused by leakage current of thetransistor, becomes high.

In view of the above problem, one of objects of one embodiment of thepresent invention is to reduce standby power due to leakage current orsuppress malfunction in a logic circuit performing clock gating.

In one embodiment of the present invention, a transistor in which achannel formation region is formed using an oxide semiconductor isapplied to an n-channel transistor included in a logic circuit. Theoxide semiconductor in the above transistor becomes an intrinsic or asubstantially intrinsic semiconductor by removing an impurity such ashydrogen or water capable of being an electron donor (donor) therein,and has an energy gap larger than a silicon semiconductor.

Specifically, the logic circuit includes a transistor in which a channelformation region is formed using the following oxide semiconductor. Inthe oxide semiconductor, hydrogen or a OH group included is removed sothat the concentration of hydrogen in the oxide semiconductor can be5×10¹⁹ (atoms/cm³) or lower, preferably 5×10¹⁸ (atoms/cm³) or lower,further preferably 5×10¹² (atoms/cm³) or lower; and the carrier densityis 5×10¹⁴/cm³ or lower, preferably 5×10¹²/cm³ or lower.

In the oxide semiconductor, the energy gap is 2 eV or higher, preferably2.5 eV or higher, further preferably 3 eV or higher; and an impuritysuch as hydrogen which forms a donor is reduced as much as possible, sothat the carrier density is 5×10¹⁴/cm³ or lower, preferably, 5×10¹²/cm³or lower.

By using a highly-purified oxide semiconductor as described for achannel formation region, a transistor whose channel width is even 10 mmhas a drain current of 1×10⁻¹³ [A] or lower in the case where the drainvoltage is 1 V and 10 V and the gate voltage is in the range of −5 V to−20 V. In other words, a highly-purified oxide semiconductor is used fora channel formation region of a transistor, whereby leakage current canbe drastically reduced.

One embodiment of the present invention is a logic circuit having afirst period during which a clock signal is input and a second periodduring which a clock signal is not input, which includes a transistorwhich is in an off state where a potential difference exists between asource terminal and a drain terminal over the second period. In thetransistor, a channel formation region is formed using an oxidesemiconductor in which the hydrogen concentration is 5×10¹⁹ (atoms/cm³)or lower.

The logic circuit of one embodiment of the present invention includes atransistor which is in an off state where a potential difference existsbetween a source terminal and a drain terminal over a period duringwhich a clock signal is not supplied. A channel formation region of thetransistor is formed using an oxide semiconductor in which the hydrogenconcentration is reduced. Specifically, the hydrogen concentration ofthe oxide semiconductor is 5×10¹⁹ (atoms/cm³) or lower. Therefore,leakage current of the transistor can be reduced. As a result, thestandby power of the logic circuit can be reduced and malfunction of thelogic circuit can be suppressed.

In particular, in the logic circuit where clock gating is performed, astate in the logic circuit is held for a long time. That is, a specifictransistor keeps an off state for a long time, where a potentialdifference exists between a source terminal and a drain terminalApplying such a transistor to the above transistor brings great effect.

Further, reduction in power consumed in the whole circuit allowsreduction in loads of an external circuit which makes a logic circuit ofone embodiment of the present invention operate. Thus, the functionalityof a semiconductor device including the logic circuit and the externalcircuit can be expanded.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 shows a configuration example of a logic circuit described inEmbodiment 1.

FIGS. 2A and 2B show a configuration example and an example of a timingchart, respectively, of a logic circuit described in Embodiment 2.

FIGS. 3A and 3B each show an example of a circuit configuration of anAND gate described in Embodiment 2.

FIG. 4A shows a configuration example of a flip-flop circuit and FIGS.4B and 4C each show an example of a circuit configuration of a NANDgate, described in Embodiment 2.

FIGS. 5A and 5B show a configuration example and an example of a timingchart, respectively, of a logic circuit described in Embodiment 3.

FIGS. 6A and 6B each show an example of a circuit configuration of a NORgate described in Embodiment 3.

FIGS. 7A and 7B show a configuration example and an example of a timingchart, respectively, of a logic circuit described in Embodiment 4.

FIG. 8A shows a configuration example of a latch and FIGS. 8B and 8Ceach show a configuration example of an inverter, in a logic circuitdescribed in Embodiment 4.

FIG. 9 shows a configuration example of a logic circuit described inEmbodiment 5.

FIG. 10 shows a configuration example of a logic circuit described inEmbodiment 6.

FIG. 11 is a cross-sectional view illustrating a structural example of ap-channel transistor and an n-channel transistor described in Embodiment7.

FIGS. 12A to 12H are cross-sectional views illustrating an example of amanufacturing process of a p-channel transistor described in Embodiment7.

FIGS. 13A to 13G are cross-sectional views illustrating an example of amanufacturing process of an n-channel transistor described in Embodiment7.

FIGS. 14A to 14D are cross-sectional views illustrating an example of amanufacturing process of an n-channel transistor described in Embodiment7.

FIG. 15 is a cross-sectional view illustrating a structural example of ap-channel transistor and an n-channel transistor described in Embodiment7.

FIGS. 16A and 16B are cross-sectional views each illustrating astructural example of a p-channel transistor and an n-channel transistordescribed in Embodiment 7.

FIGS. 17A and 17B are cross-sectional views each illustrating astructural example of a p-channel transistor and an n-channel transistordescribed in Embodiment 7.

FIGS. 18A and 18B are cross-sectional views each illustrating astructural example of a p-channel transistor and an n-channel transistordescribed in Embodiment 7.

FIGS. 19A and 19B are a plan view and a cross-sectional view,respectively, illustrating a structural example of a transistordescribed in Embodiment 8.

FIGS. 20A to 20E are cross-sectional views illustrating an example of amanufacturing process of a transistor described in Embodiment 8.

FIGS. 21A to 21E are cross-sectional views illustrating an example of amanufacturing process of a transistor described in Embodiment 9.

FIGS. 22A to 22D are cross-sectional views illustrating an example of amanufacturing process of a transistor described in Embodiment 10.

FIGS. 23A to 23F each illustrate an example of a semiconductor devicedescribed in Embodiment 11.

FIG. 24 is a graph showing an initial characteristic of a thin filmtransistor described in Example 1.

FIGS. 25A and 25B are top views of a test element for an example of athin film transistor described in Example 1.

FIGS. 26A and 26B are graphs showing Vg−Id characteristics of a testelement for an example of a thin film transistor described in Example 1.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings. Note that thepresent invention is not limited to the description below, and it iseasily understood by those skilled in the art that a variety of changesand modifications can be made without departing from the spirit andscope of the present invention. Therefore, the present invention shouldnot be limited to the descriptions of the embodiments below.

Note that since a source terminal and a drain terminal of a transistorchange depending on the structure, the operating condition, and the likeof the transistor, it is difficult to define which is a source terminalor a drain terminal Therefore, in this document (specification, claims,drawings, and the like), one of a source terminal and a drain terminalis referred to as a first terminal and the other thereof is referred toas a second terminal for distinction.

Note that the size, the thickness of a layer, or a region of eachstructure illustrated in drawings or the like in embodiments isexaggerated for simplicity in some cases. Therefore, embodiments of thepresent invention are not limited to such scales. Further, in thisspecification, ordinal numbers such as “first”, “second”, and “third”are used in order to avoid confusion among components, and the terms donot limit the components numerically.

Embodiment 1

In this embodiment, an example of a logic circuit where clock gating isperformed will be described. Specifically, an example of a logic circuithaving a period during which a clock signal is input and a period duringwhich a clock signal is not input and performing arithmetic processingwith use of the clock signal will be described with reference to FIG. 1.

A logic circuit 10 shown in FIG. 1 includes a first input terminal 11electrically connected to a wiring through which a pulse signal (PS) issupplied (hereinafter, also referred to as a pulse signal line), asecond input terminal 12 electrically connected to a wiring throughwhich a data signal (Data) is supplied (hereinafter, also referred to asa data signal line), and an output terminal 13. The logic circuit 10 hasa period during which a clock signal (CK) is supplied through the pulsesignal line and a period during which a clock signal is not supplied.That is, the logic circuit shown in FIG. 1 is a logic circuit in whichclock gating is performed. Note that the sentence “a clock gate is notsupplied” means that a clock signal is fixed to a potential at a highlevel or a potential at a low level; i.e., a signal whose potentiallevel varies from a high level to a low level or from a low level to ahigh level is not supplied.

In addition, the logic circuit 10 of this embodiment shown in FIG. 1includes a main logic circuit portion 14 and a transistor 15 which is inan off state where a potential difference exists between a sourceterminal and a drain terminal over a period during which a clock signalis not supplied. Note that the main logic circuit portion 14 includes aplurality of elements of transistors, capacitors, resistors, or thelike.

A channel formation region of the transistor 15 is formed using an oxidesemiconductor in which the hydrogen concentration is 5×10¹⁹ (atoms/cm³)or lower, preferably 5×10¹⁸ (atoms/cm³) or lower, further preferably5×10¹⁷ (atoms/cm³) or lower. In other words, the transistor 15 is atransistor in which a channel formation region is formed using an oxidesemiconductor which is highly purified by reducing the concentration ofhydrogen serving as a donor of a carrier to an extremely low level. Thehydrogen concentration in the oxide semiconductor is measured bysecondary ion mass spectrometry (SIMS).

The logic circuit of this embodiment is a logic circuit in which clockgating is performed, and includes the transistor which is in an offstate where a potential difference exists between a source terminal anda drain terminal over a period during which clock gating is performed(i.e., a clock signal is not input). In the transistor, the channelformation region is formed using an oxide semiconductor. The hydrogenconcentration of the oxide semiconductor is controlled to be 5×10¹⁹(atoms/cm³) or lower, preferably 5×10¹⁸ (atoms/cm³) or lower, furtherpreferably 5×10¹⁷ (atoms/cm³) or lower. Therefore, the off current ofthe transistor can be reduced to 1×10⁻¹³ [A] or lower. That is, leakageof electric charges through the transistor can be suppressed. As aresult, standby power during this period can be reduced and malfunctionof the logic circuit during this period can be suppressed.

In the logic circuit in which clock gating is performed, particularly, astate in the logic circuit is held for a long time. That is, a specifictransistor keeps an off state for a long time, where a potentialdifference exists between a source terminal and a drain terminalApplying such a transistor to the above transistor brings great effect.

Further, reduction in power consumed in the logic circuit allowsreduction in loads of an external circuit which makes the logic circuitof this embodiment operate. Thus, the functionality of a semiconductordevice including the logic circuit and the external circuit can beexpanded.

Note that the contents of this embodiment or part thereof can becombined freely with the contents of other embodiments or part thereofor the content of Example or part thereof.

Embodiment 2

In this embodiment, an example of the logic circuit described inEmbodiment 1 will be described. Specifically, a logic circuit includingan AND gate and a flip-flop will be described with reference to FIGS. 2Aand 2B, FIGS. 3A and 3B, and FIGS. 4A to 4C.

<Configuration Example of Logic Circuit>

A logic circuit 200 of this embodiment shown in FIG. 2A includes an ANDgate 201 and a flip-flop 202. The AND gate 201 has a first inputterminal which is electrically connected to a wiring through which anenable signal (EN) is supplied (hereinafter, also referred to as anenable signal line) and a second input terminal which is electricallyconnected to a wiring through which a clock signal (CK) is supplied(hereinafter, also referred to as a clock signal line). The flip-flop202 has a first input terminal which is electrically connected to a datasignal line and a second input terminal which is electrically connectedto an output terminal of the AND gate 201.

Note that the flip-flop 202 included in the logic circuit of thisembodiment is a circuit which can retain data for one bit utilizingfeedback operation. An output signal of the flip-flop 202 serves as anoutput signal of the logic circuit 200.

<Operation Example of Logic Circuit>

Operation of the logic circuit shown in FIG. 2A is described withreference to a timing chart shown in FIG. 2B.

During a period T1, the enable signal line serves as a wiring throughwhich a signal at a high level is supplied. Thus, an output signal(AND(Out)) of the AND gate 201 is a clock signal (CK). That is, theclock signal (CK) is input to the second input terminal of the flip-flop202. The flip-flop 202 operates with the input clock signal (CK).Specifically, the flip-flop 202 receives a data signal (D0 or D1) whenthe clock signal (CK) level is changed from the low level to the highlevel, and outputs the data signal when the clock signal (CK) level ischanged from the high level to the low level.

During a period T2, the enable signal line serves as a wiring throughwhich a signal at a low level is supplied. Thus, the output signal(AND(Out)) of the AND gate 201 is a low-level signal. That is, thelow-level signal is input to the second input terminal of the flip-flop202. At this time, the output signal (Out) of the logic circuit isretained as the data signal (D1).

During a period T3, the enable signal line serves as a wiring throughwhich a high-level signal is supplied again. That is, like the periodT1, the flip-flop 202 receives a data signal (D2 or D3) when the clocksignal (CK) level is changed from the low level to the high level, andoutputs the data signal when the clock signal (CK) level is changed fromthe high level to the low level.

In the logic circuit of this embodiment, the clock signal input to theflip-clop 202 is controlled by the enable signal (EN). That is, in thelogic circuit, clock gating is performed with respect to the flip-flop202.

Note that the logic circuit of this embodiment reads data when the clocksignal input to the flip-flop 202 goes into a high level, and retainsthe read data for one clock cycle. Thus, the output signal (Out) of thelogic circuit is temporally retained even after passing through theperiod T1 or the period T3 during which the flip-flop 202 operates.

<Example of Circuit Configuration of and Gate and Flip-Flop>

Specific examples of a circuit configuration of the AND gate 201included in the logic circuit shown in FIG. 2A are shown in FIGS. 3A and3B, and specific examples of a circuit configuration of the flip-flop202 are shown in FIGS. 4A to 4C.

An AND gate shown in FIG. 3A includes transistors 211 to 216. Thetransistors 211, 214 and 215 are p-channel transistors, and thetransistors 212, 213, and 216 are n-channel transistors.

Of the transistor 211, a gate terminal is electrically connected to anenable signal line, and a first terminal is electrically connected to awiring through which high power supply potential (VDD) is supplied(hereinafter, also referred to as a high power supply potential line).

Of the transistor 212, a gate terminal is electrically connected to theenable signal line and the gate terminal of the transistor 211, and afirst terminal is electrically connected to a second terminal of thetransistor 211.

Of the transistor 213, a gate terminal is electrically connected to aclock signal line, a first terminal is electrically connected to asecond terminal of the transistor 212, and a second terminal iselectrically connected to a wiring through which low power supplypotential (VSS) is supplied (hereinafter, referred to as a low powersupply potential line).

Of the transistor 214, a gate terminal is electrically connected to theclock signal line and the gate terminal of the transistor 213, a firstterminal is electrically connected to the high power supply potentialline, and a second terminal is electrically connected to the secondterminal of the transistor 211 and the first terminal of the transistor212.

Of the transistor 215, a gate terminal is electrically connected to thesecond terminal of the transistor 211, the first terminal of thetransistor 212, and the second terminal of the transistor 214; and afirst terminal is electrically connected to the high power supplypotential line.

Of the transistor 216, a gate terminal is electrically connected to thesecond terminal of the transistor 211, the first terminal of thetransistor 212, the second terminal of the transistor 214, and the gateterminal of the transistor 215; a first terminal is electricallyconnected to a second terminal of the transistor 215; and a secondterminal is electrically connected to the low power supply potentialline.

Note that in the AND gate, potential of a node to which the secondterminal of the transistor 215 and the first terminal of the transistor216 are electrically connected is output as an output signal (AND(Out))of the AND gate.

In this specification, each of the high power supply potential (VDD) andthe low power supply potential (VSS) may be any potential as long as thehigh power supply potential (VDD) is higher than the low power supplypotential (VSS). For example, ground potential, 0 V, or the like can beapplied to the low power supply potential (VSS), and a given positivepotential can be applied to the high power supply potential (VDD).

An AND gate shown in FIG. 3B includes transistors 221 to 225. Thetransistors 221 to 225 are n-channel transistors. In addition, thetransistors 221 to 225 are enhancement-type transistors whose thresholdvoltages are positive.

Of the transistor 221, a gate terminal and a first terminal areelectrically connected to a high power supply potential line.

Of the transistor 222, a gate terminal is electrically connected to anenable signal line, and a first terminal is electrically connected to asecond terminal of the transistor 221.

Of the transistor 223, a gate terminal is electrically connected to aclock signal line; a first terminal is electrically connected to asecond terminal of the transistor 222, and a second terminal iselectrically connected to a low power supply potential line.

Of the transistor 224, a gate terminal and a first terminal areelectrically connected to the high power supply potential line.

Of the transistor 225, a gate terminal is electrically connected to thesecond terminal of the transistor 221 and the first terminal of thetransistor 222, a first terminal is electrically connected to a secondterminal of the transistor 224, and a second terminal is electricallyconnected to the low power supply potential line.

Note that in the AND gate, potential of a node to which the secondterminal of the transistor 224 and the first terminal of the transistor225 are electrically connected is output as an output signal (AND(Out))of the AND gate.

Each of the transistor 221 and the transistor 224 is an enhancement-typetransistor in which the gate terminal and the first terminal areelectrically connected to the high power supply potential line. Thus,the transistor 221 and the transistor 224 each retain an on stateregardless of periods. In other words, the transistor 221 and thetransistor 224 are utilized as resistors.

Further, the first input terminal and the second input terminal of theAND gate can be interchanged with each other. A terminal which isspecified to be electrically connected to the enable signal line in theabove description can be electrically connected to the clock signalline, and a terminal which is specified to be electrically connected tothe clock signal line in the above description can be electricallyconnected to the enable signal line.

A flip-flop shown in FIG. 4A includes NAND gates 231 to 234.

Of the NAND gate 231, a first input terminal is electrically connectedto a data signal line, and a second input terminal is electricallyconnected to an output terminal of an AND gate.

Of the NAND gate 232, a first input terminal is electrically connectedto an output terminal of the NAND gate 231, and a second input terminalis electrically connected to the output terminal of the AND gate and thesecond input terminal of the NAND gate 231.

Of the NAND gate 233, a first input terminal is electrically connectedto the output terminal of the NAND gate 231 and the first input terminalof the NAND gate 232.

Of the NAND gate 234, a first input terminal is electrically connectedto an output terminal of the NAND gate 233, a second input terminal iselectrically connected to an output terminal of the NAND gate 232, andan output terminal is electrically connected to a second input terminalof the NAND gate 233.

The flip-flop shown in FIG. 4A is a delay-type flip-flop. Although theflip-flop of this embodiment is a delay-type flip-flop in which only a Qterminal is used as an output terminal, the flip-flop may have astructure in which two output terminals of a Q terminal and a QBterminal (output terminal of the NAND gate 234) are provided.

The flip-flop shown in FIG. 4A is just an example, and a structure ofthe flip-flop of this embodiment is not limited to that of FIG. 4A. Inother words, the flip-flop of this embodiment may have any structure aslong as data for one bit can be retained utilizing the feedbackoperation.

FIGS. 4B and 4C each show a specific example of a circuit applicable tothe NAND gates 231 to 234.

A NAND gate shown in FIG. 4B includes transistors 241 to 244. Note thatthe transistor 241 and the transistor 244 are p-channel transistors, andthe transistor 242 and the transistor 243 are n-channel transistors.

Of the transistor 241, a gate terminal is electrically connected to afirst input terminal of the NAND gate, and a first terminal iselectrically connected to a high power supply potential line.

Of the transistor 242, a gate terminal is electrically connected to thefirst input terminal of the NAND gate and the gate terminal of thetransistor 241, and a first terminal is electrically connected to asecond terminal of the transistor 241.

Of the transistor 243, a gate terminal is electrically connected to asecond input terminal of the NAND gate, a first terminal is electricallyconnected to a second terminal of the transistor 242, and a secondterminal is electrically connected to a low power supply potential line.

Of the transistor 244, a gate terminal is electrically connected to thesecond input terminal of the NAND gate and the gate terminal of thetransistor 243, a first terminal is electrically connected to the highpower supply potential line, and a second terminal is electricallyconnected to the second terminal of the transistor 241 and the firstterminal of the transistor 242.

Note that in the NAND gate, potential of a node to which the secondterminal of the transistor 241, the first terminal of the transistor242, and the second terminal of the transistor 244 are electricallyconnected is output as an output signal of the NAND gate.

A NAND gate shown in FIG. 4C includes transistors 251 to 253. Note thatthe transistors 251 to 253 are n-channel transistors. In addition, thetransistors 251 to 253 are enhancement-type transistors whose thresholdvoltages are positive.

Of the transistor 251, a gate terminal and a first terminal areelectrically connected to a high power supply potential line.

Of the transistor 252, a gate terminal is electrically connected to afirst input terminal of the NAND gate, and a first terminal iselectrically connected to a second terminal of the transistor 251.

Of the transistor 253, a gate terminal is electrically connected to asecond input terminal of the NAND gate, a first terminal is electricallyconnected to a second terminal of the transistor 252, and a secondterminal is electrically connected to a low power supply potential line.

Note that in the NAND gate, potential of a node to which the secondterminal of the transistor 251 and the first terminal of the transistor252 are electrically connected is output as an output signal of the NANDgate.

Further, the first input terminal and the second input terminal of theNAND gate can be interchanged with each other. A terminal which isspecified to be electrically connected to the first input terminal ofthe NAND gate in the above description can be electrically connected tothe second input terminal of the NAND gate, and a terminal which isspecified to be electrically connected to the second input terminal ofthe NAND gate in the above description can be electrically connected tothe first input terminal of the NAND gate.

In the logic circuit of this embodiment, at least one of the transistors242, 243, 252, and 253 included in the NAND gates 231 to 234 has achannel formation region which is formed using an oxide semiconductor.The hydrogen concentration of the oxide semiconductor is controlled tobe 5×10¹⁹ (atoms/cm³) or lower, preferably 5×10¹⁸ (atoms/cm³) or lower,further preferably 5×10¹⁷ (atoms/cm³) or lower. Therefore, the offcurrent of the transistor can be reduced to 1×10⁻¹³ [A] or lower. Thatis, leakage of electric charges through the transistor over the periodwhere clock gating is performed can be suppressed. As a result, standbypower during this period can be reduced and malfunction of the logiccircuit during this period can be suppressed.

Further, when the AND gate shown in FIG. 3B is applied to the AND gate201 included in the logic circuit of this embodiment and the delay-typeflip-flop including the NAND gate shown in FIG. 4C is applied to theflip-flop 202, all transistors included in the logic circuit can ben-channel transistors. By applying n-channel transistors to the abovetransistors (in which a channel formation region is formed using anoxide semiconductor whose hydrogen concentration is 5×10¹⁹ (atoms/cm³)or lower), consumed power can be reduced in the logic circuit in whichall of the included transistors are n-channel transistors. In addition,by formation of the logic circuit including not p-channel transistorsbut n-channel transistors, reduction in the manufacturing process,improvement of yield of the logic circuit, and reduction in themanufacturing cost can be achieved.

Further, reduction in power consumed in the logic circuit allowsreduction in loads of an external circuit which makes the logic circuitof this embodiment operate. Thus, the functionality of a semiconductordevice including the logic circuit and the external circuit can beexpanded.

Note that the contents of this embodiment or part thereof can becombined freely with the contents of other embodiments or part thereofor the content of Example or part thereof.

Embodiment 3

In this embodiment, an example of the logic circuit described inEmbodiment 1 will be described. Specifically, a logic circuit includinga NOR gate and a flip-flop will be described with reference to FIGS. 5Aand 5B and FIGS. 6A and 6B.

<Configuration Example of Logic Circuit>

A logic circuit 500 of this embodiment shown in FIG. 5A includes a NORgate 501 and a flip-flop 502. In the NOR gate 501, a first inputterminal is electrically connected to an enable signal line and a secondinput terminal is electrically connected to a wiring through which aninverted circuit signal (CKB) is supplied (hereinafter, also referred toas an inverted clock signal line). In the flip-flop 502, a first inputterminal is electrically connected to a data signal line and a secondinput terminal is electrically connected to an output terminal of theNOR gate 501.

Note that the flip-flop 502 included in the logic circuit of thisembodiment is a circuit which can retain data for one bit utilizingfeedback operation. An output signal of the flip-flop 502 serves as anoutput signal of the logic circuit 500.

<Operation Example of Logic Circuit>

Operation of the logic circuit shown in FIG. 5A is described withreference to a timing chart shown in FIG. 5B.

During a period T4, the enable signal line serves as a wiring throughwhich a signal at a low level is supplied. Thus, an output signal(NOR(Out)) of the NOR gate 501 is a clock signal (CK). That is, theclock signal (CK) is input to the second input terminal of the flip-flop502. The flip-flop 502 operates with the input clock signal (CK).Specifically, the flip-flop 502 receives a data signal (D4 or D5) whenthe level of the clock signal (CK) is changed from the low level to thehigh level, and outputs the data signal when the level of the clocksignal (CK) is changed from the high level to the low level.

During a period T5, the enable signal line serves as a wiring throughwhich a signal at a high level is supplied. Thus, the output signal(NOR(Out)) of the NOR gate 501 is a low-level signal. That is, thelow-level signal is input to the second input terminal of the flip-flop502. At this time, the output signal (Out) of the logic circuit isretrained as the data signal D5.

During a period T6, the enable signal line again serves as a wiringthrough which a signal at a low level is supplied. That is, like theperiod T4, the flip-flop 502 receives a data signal (D6 or D7) when thelevel of the clock signal (CK) is changed from the low level to the highlevel, and outputs the data signal when the level of the clock signal(CK) is changed from the high level to the low level.

In the logic circuit of this embodiment, the clock signal input to theflip-flop 502 is controlled by the enable signal (EN). That is, in thelogic circuit, clock gating is performed with respect to the flip-flop502.

Note that the logic circuit of this embodiment reads data when the clocksignal input to the flip-flop 502 goes into a high level, and retainsthe read data for one clock cycle. Thus, the output signal (Out) of thelogic circuit is temporally retained even after passing through theperiod T4 or the period T6 during which the flip-flop 502 operates.

<Example of Circuit Configuration of NOR Gate and Flip-Flop>

Specific examples of a circuit configuration of the NOR gate 501included in the logic circuit shown in FIG. 5A are shown in FIGS. 6A and6B. Note that the flip-flop 502 included in the logic circuit shown inFIG. 5A can be the delay-type flip-flop shown in FIG. 4A. Therefore, theabove description of the delay-type flip-flop is to be referred to as aspecific example of a circuit configuration of the flip-flop 502.Specific examples of a circuit configuration of the NOR gate 501 aredescribed below, with reference to FIGS. 6A and 6B.

A NOR gate shown in FIG. 6A includes transistors 511 to 514. Note thatthe transistors 511 and 512 are p-channel transistors and thetransistors 513 and 514 are n-channel transistors.

Of the transistor 511, a gate terminal is electrically connected to theenable signal line, and a first terminal is electrically connected to awiring through which high power supply potential (VDD) is supplied(hereinafter, referred to as a high power supply line).

Of the transistor 512, a gate terminal is electrically connected to theinverted clock signal line, and a first terminal is electricallyconnected to a second terminal of the transistor 511.

Of the transistor 513, a gate terminal is electrically connected to theinverted clock signal line and the gate terminal of the transistor 512,a first terminal is electrically connected to a second terminal of thetransistor 512, and a second terminal is electrically connected to a lowpower supply potential line.

Of the transistor 514, a gate terminal is electrically connected to theenable signal line and the gate terminal of the transistor 511, a firstterminal is electrically connected to the second terminal of thetransistor 512 and the first terminal of the transistor 513, and asecond terminal is electrically connected to the low power supplypotential line.

Note that in the NOR gate, potential of a node to which the secondterminal of the transistor 512, the first terminal of the transistor513, and the first terminal of the transistor 514 are electricallyconnected is output as an output signal (NOR(Out)) of the NOR gate.

A NOR gate shown in FIG. 6B includes transistors 521 to 523. Note thatthe transistors 521 to 523 are n-channel transistors. In addition, thetransistors 521 to 523 are enhancement-type transistors whose thresholdvoltages are positive.

Of the transistor 521, a gate terminal and a first terminal areelectrically connected to a high power supply potential line.

Of the transistor 522, a gate terminal is electrically connected to theinverted clock signal line, a first terminal is electrically connectedto a second terminal of the transistor 521, and a second terminal iselectrically connected to a low power supply potential line.

Of the transistor 523, a gate terminal is electrically connected to theenable signal line, a first terminal is electrically connected to thesecond terminal of the transistor 521 and the first terminal of thetransistor 522, and a second terminal is electrically connected to thelow power supply potential line.

Note that in the NOR gate, potential of a node to which the secondterminal of the transistor 521, the first terminal of the transistor522, and the first terminal of the transistor 523 are electricallyconnected is output as an output signal (NOR(Out)) of the NOR gate.

The transistor 521 is an enhancement-type transistor in which the gateterminal and the first terminal are electrically connected to the highpower supply potential line. Thus, the transistor 521 retains an onstate regardless of periods. In other words, the transistor 521 isutilized as a resistor.

Further, the first input terminal and the second input terminal of theNOR gate can be interchanged with each other. A terminal which isspecified to be electrically connected to the enable signal line in theabove description can be electrically connected to the inverted clocksignal line, and a terminal which is specified to be electricallyconnected to the inverted clock signal line in the above description canbe electrically connected to the enable signal line.

The logic circuit of this embodiment includes a transistor in which achannel formation region is formed using an oxide semiconductor. Thehydrogen concentration of the oxide semiconductor is controlled to be5×10¹⁹ (atoms/cm³) or lower, preferably 5×10¹⁸ (atoms/cm³) or lower,further preferably 5×10¹⁷ (atoms/cm³) or lower. Therefore, the offcurrent of the transistor can be reduced to 1×10⁻¹³ [A] or lower. Thatis, leakage of electric charges through the transistor over the periodwhere clock gating is performed can be suppressed. As a result, standbypower during this period can be reduced and malfunction of the logiccircuit during this period can be suppressed.

Further, when the NOR gate shown in FIG. 6B is applied to the NOR gate501 included in the logic circuit of this embodiment and the delay-typeflip-flop including the NAND gate shown in FIG. 4C is applied to theflip-flop 502, all transistors included in the logic circuit can ben-channel transistors. By applying n-channel transistors to the abovetransistors (in which a channel formation region is formed using anoxide semiconductor whose hydrogen concentration is 5×10¹⁹ (atoms/cm³)or lower), consumed power can be reduced in the logic circuit in whichall of the included transistors are n-channel transistors. In addition,by formation of the logic circuit including not p-channel transistorsbut n-channel transistors, reduction in the manufacturing process,improvement of yield of the logic circuit, and reduction in themanufacturing cost can be achieved.

Further, reduction in power consumed in the logic circuit allowsreduction in loads of an external circuit which makes the logic circuitof this embodiment operate. Thus, the functionality of a semiconductordevice including the logic circuit and the external circuit can beexpanded.

Note that the contents of this embodiment or part thereof can becombined freely with the contents of other embodiments or part thereofor the content of Example or part thereof.

Embodiment 4

In this embodiment, an example of the logic circuit described inEmbodiment 1 will be described. Specifically, a logic circuit includinga latch and a flip-flop will be described with reference to FIGS. 7A and7B and FIGS. 8A to 8C.

<Configuration Example of Logic Circuit>

A logic circuit 600 of this embodiment shown in FIG. 7A includes a latch601 and a flip-flop 602. In the latch 601, a first input terminal iselectrically connected to an enable signal line and a second inputterminal is electrically connected to an inverted clock signal line. Inthe flip-flop 602, a first input terminal is electrically connected to adata signal line and a second input terminal is electrically connectedto an output terminal of the latch 601.

Note that the flip-flop 602 included in the logic circuit of thisembodiment is a circuit which can retain data for one bit utilizingfeedback operation. An output signal of the flip-flop 602 serves as anoutput signal of the logic circuit 600.

The latch 601 of this embodiment may have any structure as long as datacan be latched. Here, as the latch 601, a circuit which latches aninverted signal of a signal input to the second input terminal when asignal at a high level is supplied to the first input terminal is used.

<Operation Example of Logic Circuit>

Operation of the logic circuit shown in FIG. 7A is described withreference to a timing chart shown in FIG. 7B.

During a period T7, the enable signal line serves as a wiring thoughwhich a signal at a high level is supplied. At this time, an outputsignal (Latch(Out)) of the latch 601 is a clock signal (CK). In otherwords, the clock signal (CK) is input to the second input terminal ofthe flip-flop 602. The flip-flop 602 operates with the input clocksignal (CK). Specifically, the flip-flop 602 receives a data signal (D8or D9) when the level of the clock signal (CK) is changed from the lowlevel to the high level, and outputs the data signal when the level ofthe clock signal (CK) is changed from the high level to the low level.

During a period T8, the enable signal line serves as a wiring throughwhich a signal at a low level is supplied. At this time, the outputsignal (Latch(Out)) of the latch 601 retains a low level. In otherwords, a low-level signal is input to the second input terminal of theflip-flop 602. At this time, the output signal (Out) of the logiccircuit is retained as the data signal (D9).

During a period T9, the enable signal line again serves as a wiringthrough which a signal at a high level is supplied. That is, like theperiod T7, the flip-flop 602 receives a data signal (D10 or D11) whenthe level of the clock signal (CK) is changed from the low level to thehigh level, and outputs the data signal when the level of the clocksignal (CK) is changed from the high level to the low level.

In the logic circuit of this embodiment, the clock signal (CK) input tothe flip-flop 602 is controlled by the enable signal (EN). That is, inthe logic circuit, clock gating is performed with respect to theflip-flop 602.

Note that the logic circuit of this embodiment reads data when the clocksignal input to the flip-flop 602 goes into a high level, and retainsthe read data for one clock cycle. Thus, the output signal (Out) of thelogic circuit is temporally retained even after passing through theperiod T7 or the period T9 during which the flip-flop 602 operates.

<Example of Circuit Configuration of Latch and Flip-Flop>

Specific examples of a circuit configuration of the latch 601 includedin the logic circuit shown in FIG. 7A are shown in FIGS. 8A to 8C. Notethat the flip-flop 602 included in the logic circuit shown in FIG. 7Acan be the delay-type flip-flop shown in FIG. 4A. Therefore, the abovedescription of the delay-type flip-flop is to be referred to as aspecific example of a circuit configuration of the flip-flop 602.Specific examples of a circuit configuration of the latch 601 aredescribed below, with reference to FIGS. 8A to 8C.

A latch shown in FIG. 8A includes a transistor 611, an inverter 612, andan inverter 613. Note that the transistor 611 is an n-channeltransistor.

Of the transistor 611, a gate terminal is electrically connected to theenable signal line, and a first terminal is electrically connected tothe inverted clock signal line.

An input terminal of the inverter 612 is electrically connected to asecond terminal of the transistor 611.

An input terminal of the inverter 613 is electrically connected to anoutput terminal of the inverter 612, and an output terminal thereof iselectrically connected to a second terminal of the transistor 611 andthe input terminal of the inverter 612.

Note that in the latch, an output signal of the inverter 612 is outputas an output signal (Latch(Out)) of the latch.

FIGS. 8B and 8C show specific examples of a circuit applicable to theinverter 612 and the inverter 613.

An inverter shown in FIG. 8B includes a transistor 621 and a transistor622. Note that the transistor 621 is a p-channel transistor and thetransistor 622 is an n-channel transistor.

Of the transistor 621, a gate terminal is electrically connected to theinput terminal of the inverter, and a first terminal is electricallyconnected to a high power supply potential line.

Of the transistor 622, a gate terminal is electrically connected to theinput terminal of the inverter and the gate terminal of the transistor621, a first terminal is electrically connected to a second terminal ofthe transistor 621, and a second terminal is electrically connected to alow power supply potential line.

Note that in the inverter, potential of a node to which the secondterminal of the transistor 621 and the first terminal of the transistor622 are electrically connected is output as an output signal.

An inverter shown in FIG. 8C includes a transistor 631 and a transistor632. Note that the transistor 631 and the transistor 632 are n-channeltransistors. In addition, the transistor 631 and the transistor 632 areenhancement-type transistors whose threshold voltages are positive.

Of the transistor 631, a gate terminal and a first terminal areelectrically connected to a high power supply potential line.

Of the transistor 632, a gate terminal is electrically connected to theinput terminal of the inverter, a first terminal is electricallyconnected to a second terminal of the transistor 631, and a secondterminal is electrically connected to a low power supply potential line.

Note that in the inverter, potential of a node to which the secondterminal of the transistor 631 and the first terminal of the transistor632 are electrically connected is output as an output signal.

Although the above description is the case where the transistor 611 isan n-channel transistor, the transistor 611 can be a p-channeltransistor. In this case, by inverting the enable signal, the operationsimilar to the above can be performed.

The logic circuit of this embodiment includes a transistor in which achannel formation region is formed using an oxide semiconductor. Thehydrogen concentration of the oxide semiconductor is controlled to be5×10¹⁹ (atoms/cm³) or lower, preferably 5×10¹⁸ (atoms/cm³) or lower,further preferably 5×10¹⁷ (atoms/cm³) or lower. Therefore, the offcurrent of the transistor can be reduced to 1×10⁻¹³ [A] or lower. Thatis, leakage of electric charges through the transistor during the periodwhere clock gating is performed can be suppressed. As a result, standbypower during this period can be reduced and malfunction of the logiccircuit during this period can be suppressed.

Further, when a latch including the inverter shown in FIG. 8C is appliedto the latch 601 included in the logic circuit of this embodiment andthe delay-type flip-flop including the NAND gate shown in FIG. 4C isapplied to the flip-flop 602, all transistors included in the logiccircuit can be n-channel transistors. By applying n-channel transistorsto the above transistors (in which a channel formation region is formedusing an oxide semiconductor whose hydrogen concentration is 5×10¹⁹(atoms/cm³) or lower), consumed power can be reduced in the logiccircuit in which all of included transistors are n-channel transistors.In addition, by formation of the logic circuit including not p-channeltransistors but n-channel transistors, reduction in the manufacturingprocess, improvement of yield of the logic circuit, and reduction in themanufacturing cost can be achieved.

Further, reduction in power consumed in the logic circuit allowsreduction in loads of an external circuit which makes the logic circuitof this embodiment operate. Thus, the functionality of a semiconductordevice including the logic circuit and the external circuit can beexpanded.

Note that the contents of this embodiment or part thereof can becombined freely with the contents of other embodiments or part thereofor the content of Example or part thereof.

Embodiment 5

In this embodiment, an example of the logic circuit described inEmbodiment 1 will be described. Specifically, a logic circuit includingan AND gate and a plurality of flip-flops will be described withreference to FIG. 9.

A logic circuit 800 of this embodiment shown in FIG. 9 includes an ANDgate 801 and a flip-flop group 805 including flip-flops 802 to 804.

Of the AND gate 801, a first input terminal is electrically connected toan enable signal line, and a second input terminal is electricallyconnected to a clock signal line.

Of the flip-flop 802, a first input terminal is electrically connectedto a data signal line, and a second input terminal is electricallyconnected to an output terminal of the AND gate 801.

Of the flip-flop 803, a first input terminal is electrically connectedto an output terminal of the flip-flop 802, and a second input terminalis electrically connected to the output terminal of the AND gate 801.

In the flip-flop 804, a first input terminal is electrically connectedto an output terminal of the flip-flop 803, and a second input terminalis electrically connected to the output terminal of the AND gate 801.

Note that an output signal of the flip-flop 804 is an output signal(Out) of the logic circuit 800.

Note that the flip-flops 802 to 804 included in the logic circuit ofthis embodiment are circuits which can retain data for one bit utilizingfeedback operation. For example, a delay-type flip-flop shown in FIG. 4Acan be applied.

In the logic circuit of this embodiment, the clock signal (CK) input tothe flip-flop group 805 is controlled by the enable signal (EN). Thatis, in the logic circuit, clock gating is performed with respect to theflip-flop group 805.

Further, of the flip-flop in the second or subsequent stage in theflip-flop group 805, the first input terminal is electrically connectedto the output terminal of the flip-flop in the previous stage. That is,the logic circuit of this embodiment is a shift register which shiftsthe data signal (Data) through the flip-flops sequentially during aperiod where a clock signal is input.

The logic circuit of this embodiment includes a transistor in which achannel formation region is formed using an oxide semiconductor. Thehydrogen concentration of the oxide semiconductor is controlled to be5×10¹⁹ (atoms/cm³) or lower, preferably 5×10¹⁸ (atoms/cm³) or lower,further preferably 5×10¹⁷ (atoms/cm³) or lower. Therefore, the offcurrent of the transistor can be reduced to 1×10⁻¹³ [A] or lower. Thatis, leakage of electric charges through the transistor during the periodwhere clock gating is performed can be suppressed. As a result, standbypower during this period can be reduced and malfunction of the logiccircuit during this period can be suppressed.

Further, all transistors included in the AND gate 801 and the flip-flopgroup 805 in the logic circuit of this embodiment can be n-channeltransistors. By applying n-channel transistors to the above transistors(in which a channel formation region is formed using an oxidesemiconductor whose hydrogen concentration is 5×10¹⁹ (atoms/cm³) orlower), consumed power can be reduced in the logic circuit in which allof the included transistors are n-channel transistors. In addition, byformation of the logic circuit including not p-channel transistors butn-channel transistors, reduction in the manufacturing process,improvement of yield of the logic circuit, and reduction in themanufacturing cost can be achieved.

Further, reduction in power consumed in the logic circuit allowsreduction in loads of an external circuit which makes the logic circuitof this embodiment operate. Thus, the functionality of a semiconductordevice including the logic circuit and the external circuit can beexpanded.

Note that this embodiment shows the logic circuit which includes threeflip-flops; however, the number of flip-flops in the logic circuit ofthis embodiment is not limited to three. As the logic circuit of thisembodiment, a logic circuit which includes first to n-th flip-flops (nis a natural number) can be used. Note that of the k-th flip-flop (k isa natural number equal to or less than n) included in the logic circuit,a first input terminal is electrically connected to an output terminalof the (k−1)-th flip-flop, and a second input terminal is electricallyconnected to the output terminal of the AND gate 801.

Furthermore, in this embodiment, an output signal of the flip-flop inthe previous stage is input to the first input terminal of the flip-flopin the second or subsequent stage; however, a structure of the logiccircuit of this embodiment is not limited to the above structure. Forexample, a structure in which a signal is input from the externalcircuit of the logic circuit 800 to the flip-flop may be employed.Alternatively, a structure may be employed, in which a first inputterminal of a flip-flop is electrically connected to an output terminalof a flip-flop which is not a flip-flop in the previous stage; e.g., thefirst input terminal of the flip-flop may be electrically connected toan output terminal of a flip-flop in a stage before the preceding stage.Further alternatively, a first input terminal of a flip-flop may beconnected to an output terminal of another flip-flop via anothercircuit, instead of being connected directly thereto.

The plurality of flip-flops included in the logic circuit of thisembodiment do not necessarily have the same structure to each other.Each of the flip-flops may have a different structure in accordance withapplications or the like.

Note that the contents of this embodiment or part thereof can becombined freely with the contents of other embodiments or part thereofor the content of Example or part thereof.

Embodiment 6

In this embodiment, an example of the logic circuit described inEmbodiment 1 will be described. Specifically, a logic circuit includingan AND gate and a plurality of flip-fops will be described withreference to FIG. 10.

A logic circuit 900 of this embodiment shown in FIG. 10 includes acontrol portion 903 including a flip-flop 901 and an AND gate 902, and aflip-flop group 907 including flip-flops 904 to 906.

Of the flip-flop 901, a first input terminal is electrically connectedto a wiring through which a first data signal (Data 1) is supplied(hereinafter, referred to as a first data signal line), and a secondinput terminal is electrically connected to a clock signal line.

Of the AND gate 902, a first input terminal is electrically connected toan output terminal of the flip-flop 901, and a second input terminal iselectrically connected to an enable signal line.

Of the flip-flop 904, a first input terminal is electrically connectedto a wiring through which a second data signal (Data 2) is supplied(hereinafter, also referred to as a second data signal line), and asecond input terminal is electrically connected to an output terminal ofthe AND gate 902.

Of the flip-flop 905, a first input terminal is electrically connectedto an output terminal of the flip-flop 904, and a second input terminalis electrically connected to the output terminal of the AND gate 902.

Of the flip-flop 906, a first input terminal is electrically connectedto an output terminal of the flip-flop 905, and a second input terminalis electrically connected to the output terminal of the AND gate 902.

Note that an output signal of the flip-flop 906 is an output signal(Out) of the logic circuit 900.

The flip-flop 901 and the flip-flops 904 to 906 included in the logiccircuit of this embodiment are circuits which can retain data for onebit utilizing feedback operation. For example, a delay-type flip-flopshown in FIG. 4A can be applied.

In the logic circuit of this embodiment, the clock signal input to theflip-flop group 907 is controlled by the enable signal (EN) and theoutput signal of the flip-flop 901 controlled by the first data signal(Data 1) and the clock signal. That is, in the logic circuit, clockgating is performed with respect to the flip-flop group 907.

Further, of the flip-flop in the second or subsequent stage in theflip-flop group 907, the first input terminal is electrically connectedto the output terminal of the flip-flop in the previous stage. That is,the logic circuit of this embodiment is a shift register which shiftsthe second data signal (Data 2) through the flip-flops sequentiallyduring a period where a clock signal is input.

The logic circuit of this embodiment includes a transistor in which achannel formation region is formed using an oxide semiconductor. Thehydrogen concentration of the oxide semiconductor is controlled to be5×10¹⁹ (atoms/cm³) or lower, preferably 5×10¹⁸ (atoms/cm³) or lower,further preferably 5×10¹⁷ (atoms/cm³) or lower. Therefore, the offcurrent of the transistor can be reduced to 1×10⁻¹³ [A] or lower. Thatis, leakage of electric charges through the transistor during the periodwhere clock gating is performed can be suppressed. As a result, standbypower during this period can be reduced and malfunction of the logiccircuit during this period can be suppressed.

Further, all transistors included in the control portion 903 and theflip-flop group 907 in the logic circuit of this embodiment can ben-channel transistors. By applying n-channel transistors to the abovetransistors (in which a channel formation region is formed using anoxide semiconductor whose hydrogen concentration is 5×10¹⁹ (atoms/cm³)or lower), consumed power can be reduced in the logic circuit in whichall of the included transistors are n-channel transistors. In addition,by formation of the logic circuit including not p-channel transistorsbut n-channel transistors, reduction in the manufacturing process,improvement of yield of the logic circuit, and reduction in themanufacturing cost can be achieved.

Further, reduction in power consumed in the logic circuit allowsreduction in loads of an external circuit which makes the logic circuitof this embodiment operate. Thus, the functionality of a semiconductordevice including the logic circuit and the external circuit can beexpanded.

Note that this embodiment shows the flip-flop group 907 which includesthree flip-flops; however, the number of flip-flops in the flip-flopgroup 907 of this embodiment is not limited to three. As the logiccircuit of this embodiment, a logic circuit which includes a flip-flopgroup including first to n-th flip-flops (n is a natural number) can beused. Note that of the k-th flip-flop (k is a natural number equal to orless than n) included in the flip-flop group, the first input terminalis electrically connected to the output terminal of the (k−1)-thflip-flop, and the second input terminal is electrically connected tothe output terminal of the AND gate 902.

Furthermore, in the flip-flop group 907 of this embodiment, the outputsignal of the flip-flop in the previous stage is input to the firstinput terminal of the flip-flop in the second or subsequent stage;however, a structure of the flip-flop group of this embodiment is notlimited to the above structure. For example, a structure in which asignal is input from the external circuit of the logic circuit 900 tothe flip-flop may be employed. Alternatively, a structure may beemployed, in which a first input terminal of a flip-flop is electricallyconnected to an output terminal of a flip-flop which is not a flip-flopin the previous stage; e.g., the first input terminal of the flip-flopmay be electrically connected to an output terminal of a flip-flop in astage before the preceding stage. Further alternatively, a first inputterminal of a flip-flop may be connected to an output terminal ofanother flip-flop via another circuit instead of being connecteddirectly thereto.

The plurality of flip-flops included in the logic circuit of thisembodiment do not necessarily have the same structure to each other.Each of the flip-flops may have a different structure in accordance withapplications or the like.

Note that the contents of this embodiment or part thereof can becombined freely with the contents of other embodiments or part thereofor the content of Example or part thereof.

Embodiment 7

In this embodiment, examples of transistors included in any of the logiccircuits described in Embodiments 1 to 6 will be described.Specifically, described are examples in which a transistor formed usinga substrate including a semiconductor material is applied to a p-channeltransistor included in the logic circuit, and a transistor formed usingan oxide semiconductor is applied to an n-channel transistor included inthe logic circuit.

<Structural Example>

A p-channel transistor and an n-channel transistor included in the logiccircuit of this embodiment are shown in FIG. 11.

A p-channel transistor 160 illustrated in FIG. 11 includes a channelformation region 116 provided over a substrate 100 including asemiconductor material, a pair of impurity regions (specifically, a pairof impurity regions 114 a and 114 b and a pair of high concentrationimpurity regions 120 a and 120 b) between which the channel formationregion 116 is interposed, a gate insulating layer 108 a provided overthe channel formation region 116, a gate electrode layer 110 a providedover the gate insulating layer 108 a, a source electrode layer 130 awhich is electrically connected to the impurity region 114 a, and adrain electrode layer 130 b which is electrically connected to theimpurity region 114 b.

Note that sidewall insulating layers 118 are provided on side surfacesof the gate electrode layer 110 a. The substrate 100 including asemiconductor material is provided with the pair of high concentrationimpurity regions 120 a and 120 b in regions which do not overlap withthe sidewall insulating layers 118. The substrate 100 is also providedwith a pair of metal compound regions 124 a and 124 b over the pair ofhigh concentration impurity regions 120 a and 120 b. Further, elementisolation insulating layers 106 are provided over the substrate 100 sothat the transistor 160 can be interposed therebetween, and aninterlayer insulating layer 126 and an interlayer insulating layer 128are provided so as to cover the transistor 160. The source electrodelayer 130 a and the drain electrode layer 130 b are electricallyconnected to the metal compound region 124 a and the metal compoundregion 124 b, respectively, through openings formed in the interlayerinsulating layer 126 and the interlayer insulating layer 128. That is,the source electrode layer 130 a is electrically connected to the highconcentration impurity region 120 a and the impurity region 114 athrough the metal compound region 124 a, and the drain electrode layer130 b is electrically connected to the high concentration impurityregion 120 b and the impurity region 114 b through the metal compoundregion 124 b.

In addition, as layers below an n-channel transistor 164 describedlater, an insulating layer 108 b formed using the same material fromwhich the gate insulating layer 108 a is formed, an electrode layer 110b formed using the same material as the gate electrode layer 110 a, andan electrode layer 130 c formed using the same material as the sourceelectrode layer 130 a and the drain electrode layer 130 b are provided.

The n-channel transistor 164 illustrated in FIG. 11 includes a gateelectrode layer 136 d provided over the interlayer insulating layer 128,a gate insulating layer 138 provided over the gate electrode layer 136d, an oxide semiconductor layer 140 provided over the gate insulatinglayer 138, and a source electrode layer 142 a and a drain electrodelayer 142 b which are provided over the oxide semiconductor layer 140and electrically connected to the oxide semiconductor layer 140.

Here, the gate electrode layer 136 d is provided so as to be embedded inan insulating layer 132 formed over the interlayer insulating layer 128.In a manner similar to the gate electrode layer 136 d, an electrodelayer 136 a and an electrode layer 136 b which are respectively incontact with the source electrode layer 130 a and the drain electrodelayer 130 b included in the p-channel transistor 160 are formed. Inaddition, an electrode layer 136 c in contact with the electrode layer130 c is formed.

Over the transistor 164, a protective insulating layer 144 is providedto be partly in contact with the oxide semiconductor layer 140, and aninterlayer insulating layer 146 is provided over the protectiveinsulating layer 144. Here, openings reaching the source electrode layer142 a and the drain electrode layer 142 b are provided in the protectiveinsulating layer 144 and the interlayer insulating layer 146. Anelectrode layer 150 d and an electrode layer 150 e are formed, which arerespectively in contact with the source electrode layer 142 a and thedrain electrode layer 142 b through the openings. In a manner similar tothe electrode layer 150 d and the electrode layer 150 e, an electrodelayer 150 a, an electrode layer 150 b, and an electrode layer 150 c areformed, which are respectively in contact with the electrode layer 136a, the electrode layer 136 b, and the electrode layer 136 c throughopenings provided in the gate insulating layer 138, the protectiveinsulating layer 144, and the interlayer insulating layer 146.

The oxide semiconductor layer 140 is highly purified by sufficientlyremoving an impurity such as hydrogen therein. Specifically, thehydrogen concentration of the oxide semiconductor layer 140 is 5×10¹⁹(atoms/cm³) or lower. Note that the preferable hydrogen concentration ofthe oxide semiconductor layer 140 is 5×10¹⁸ (atoms/cm³) or lower, andthe much preferable concentration is 5×10¹⁷ (atoms/cm³) or lower. Whenthe highly purified oxide semiconductor layer 140 in which the hydrogenconcentration is sufficiently reduced is used, the transistor 164 havingan excellent off-current characteristic can be obtained. For example, inthe case where the drain voltage Vd is +1 V or +10 V and the gatevoltage Vg is in the range of −5 V to −20 V, the off current is 1×10⁻¹³[A] or lower. Applying the highly-purified oxide semiconductor layer 140in which the hydrogen concentration is sufficiently reduced allowsreduction in off current in the transistor 164. The hydrogenconcentration in the oxide semiconductor layer 140 is measured bysecondary ion mass spectrometry (SIMS).

Further, an insulating layer 152 is provided over the interlayerinsulating layer 146, and an electrode layer 154 a, an electrode layer154 b, an electrode layer 154 c, and an electrode layer 154 d areprovided so as to be embedded in the insulating layer 152. Note that theelectrode layer 154 a is in contact with the electrode layer 150 a, theelectrode layer 154 b is in contact with the electrode layer 150 b, theelectrode layer 154 c is in contact with the electrode layer 150 c andthe electrode layer 150 d, and the electrode layer 154 d is in contactwith the electrode layer 150 e.

The source electrode layer 130 a in the p-channel transistor 160 of thisembodiment is electrically connected to the electrode layers 136 a, 150a, and 154 a provided in the upper region. Thus, conductive layers forthe above-described electrode layers are formed as appropriate, wherebythe source electrode layer 130 a in the p-channel transistor 160 can beelectrically connected to any of electrode layers included in then-channel transistor 164 provided in the upper region. The drainelectrode layer 130 b in the p-channel transistor 160 can also beelectrically connected to any of electrode layers included in then-channel transistor 164 provided in the upper region. Although notillustrated in FIG. 11, the gate electrode layer 110 a in the p-channeltransistor 160 can be electrically connected to any of electrode layersincluded in the n-channel transistor 164 through an electrode layerprovided in the upper region.

Similarly, the source electrode layer 142 a in the n-channel transistor164 of this embodiment is electrically connected to the electrode layers130 c and 110 b provided in the lower region. Thus, conductive layersfor the above-described electrode layers are formed as appropriate,whereby the source electrode layer 142 a in the n-channel transistor 164can be electrically connected to the gate electrode layer 110 a, thesource electrode layer 130 a, or the drain electrode layer 130 b of thep-channel transistor 160. Although not illustrated in FIG. 11, the gateelectrode layer 136 d or the drain electrode layer 142 b in then-channel transistor 164 can be electrically connected to any ofelectrode layers included in the p-channel transistor 160 through anelectrode layer provided in the lower region.

When a plurality of p-channel transistors 160 and n-channel transistors164 described above are provided, the logic circuit described in any ofEmbodiments 1 to 6 can be provided. Not that all n-channel transistors164 included in the logic circuit are not necessarily to be transistorsincluding an oxide semiconductor, but the n-channel transistors 164 canhave different structures depending on characteristics required for eachtransistor. For example, as an n-channel transistor which needs tooperate at high speed, a transistor formed using a substrate including asemiconductor material can be employed, and as an n-channel transistorin which reduction in leakage current is needed, a transistor formedusing an oxide semiconductor can be employed.

<Example of Manufacturing Steps>

Next, examples of manufacturing methods of the p-channel transistor 160and the n-channel transistor 164 are described. Hereinafter, amanufacturing method of the p-channel transistor 160 is described firstwith reference to FIGS. 12A to 12H, and then, a manufacturing method ofthe n-channel transistor 164 is described with reference to FIGS. 13A to13G and FIGS. 14A to 14D.

First, the substrate 100 including a semiconductor material is prepared(see FIG. 12A). The substrate 100 including a semiconductor material canbe a single crystal semiconductor substrate formed using silicon,silicon carbide, or the like; a polycrystalline semiconductor substrate;a compound semiconductor substrate formed using silicon germanium or thelike; an SOI substrate; or the like. Here, an example of the case wherea single crystal silicon substrate is used as the substrate 100including a semiconductor material is described. In general, the term“SOT substrate” means a semiconductor substrate in which a siliconsemiconductor layer is provided over an insulating surface. In thisspecification and the like, the term “SOT substrate” also includes asemiconductor substrate in which a semiconductor layer formed using amaterial other than silicon is provided over an insulating surface inits category. That is, a semiconductor layer included in the “SOTsubstrate” is not limited to a silicon semiconductor layer. Further, the“SOT substrate” includes a structure in which a semiconductor layer isformed over an insulating substrate such as a glass substrate with aninsulating layer interposed therebetween.

Over the substrate 100, a protective layer 102 serving as a mask forformation of an element isolation insulating layer is formed (see FIG.12A). As the protective layer 102, for example, an insulating layerformed using silicon oxide, silicon nitride, silicon nitride oxide, orthe like can be used. Note that before or after this step, an impurityelement imparting n-type conductivity or an impurity element impartingp-type conductivity may be added to the substrate 100 in order tocontrol the threshold voltage of a semiconductor device. In the casewhere the semiconductor is silicon, the impurity imparting n-typeconductivity can be phosphorus, arsenic, or the like. The impurityimparting p-type conductivity can be boron, aluminum, gallium, or thelike.

Next, part of the substrate 100 in a region which is not covered withthe protective layer 102 (exposed region) is etched with use of theprotective layer 102 as a mask. By this etching, an isolatedsemiconductor region 104 is formed (see FIG. 12B). As the etching, dryetching is preferably performed, but wet etching can be performed. Anetching gas and an etchant can be selected as appropriate depending on amaterial of layers to be etched.

Next, an insulating layer is formed to cover the semiconductor region104, and the insulating layer in a region overlapping with thesemiconductor region 104 is selectively removed, so that the elementisolation insulating layers 106 are formed (see FIG. 12B). Theinsulating layer is formed using silicon oxide, silicon nitride, siliconnitride oxide, or the like. As a removal method of the insulating layer,polishing treatment such as chemical mechanical polishing (CMP), etchingtreatment, or the like can be given, and any of the above treatment maybe used. Note that the protective layer 102 is removed after formationof the semiconductor region 104 or formation of the element isolationinsulating layers 106.

Next, an insulating layer is formed over the semiconductor region 104,and a layer including a conductive material is formed over theinsulating layer.

The insulating layer serves later as a gate insulating layer, and isformed by CVD method, a sputtering method, or the like to be a singlelayer of a silicon oxide film, a silicon nitride oxide film, a siliconnitride film, a hafnium oxide film, an aluminum oxide film, a tantalumoxide film, or the like or a stacked layer including any of the abovefilms. Alternatively, the surface of the semiconductor region 104 isoxidized or nitrided by high-density plasma treatment or thermaloxidation treatment, whereby the insulating layer may be formed. Thehigh-density plasma treatment can be performed using, for example, amixed gas of a rare gas such as He, Ar, Kr, or Xe and a gas such asoxygen, nitrogen oxide, ammonia, nitrogen, or hydrogen. There is noparticular limitation on the thickness of the insulating layer, but theinsulating layer can be formed to have a thickness in the range oflarger than or equal to 1 nm and smaller than or equal to 100 nm, forexample.

The layer including a conductive material can be formed using a metalmaterial such as aluminum, copper, titanium, tantalum, or tungsten.Alternatively, the layer including a conductive material may be formedusing a semiconductor material such as polycrystalline silicon includinga conductive material. There is also no particular limitation on themethod for forming the layer including a conductive material, and avariety of film formation methods, such as an evaporation method, a CVDmethod, a sputtering method, or a spin coating method can be employed.Note that the case of forming the layer including a conductive materialusing a metal material is described in this embodiment.

Then, the insulating layer and the layer including a conductive materialare selectively etched, so that the gate insulating layer 108 a and thegate electrode layer 110 a are formed (see FIG. 12C).

Next, an insulating layer 112 covering the gate electrode layer 110 a isformed (see FIG. 12C). Then, boron (B), aluminum (Al), or the like isadded to the semiconductor region 104, so that the pair of impurityregions 114 a and 114 b with a shallow junction are formed (see FIG.12C). Note that although boron or aluminum is added here for formationof a p-channel transistor, in the case of forming an n-channeltransistor, an impurity element such as phosphorus (P) or arsenic (As)may be added. Note that by formation of the pair of impurity regions 114a and 114 b, the channel formation region 116 is formed in thesemiconductor region 104 below the gate insulating layer 108 a (see FIG.12C). Here, the concentrations of the added impurity can be set asappropriate, and the concentrations are preferably set to be high inaccordance with high miniaturization of semiconductor elements. Althoughthe pair of impurity regions 114 a and 114 b are formed after formationof the insulating layer 112 here, the insulating layer 112 may be formedafter formation of the pair of impurity regions 114 a and 114 b.

Next, the sidewall insulating layers 118 are formed (see FIG. 12D). Aninsulating layer is formed so as to cover the insulating layer 112, andhighly anisotropic etching treatment is performed on the insulatinglayer, so that the sidewall insulating layers 118 can be formed in aself-alignment manner. At this time, the insulating layer 112 is partlyetched, so that a top surface of the gate electrode layer 110 a and topsurfaces of the impurity regions 114 a and 114 b may be exposed.

Next, an insulating layer is formed to cover the gate electrode layer110 a, the pair of impurity regions 114 a and 114 b, the sidewallinsulating layers 118, and the like. Then, boron (B), aluminum (Al), orthe like is added to part of the impurity regions 114 a and 114 b, sothat the pair of high concentration impurity regions 120 a and 120 b areformed (see FIG. 12E). Here, in the case of forming an n-channeltransistor, an impurity element such as phosphorus (P) or arsenic (As)may be added. After that, the insulating layer is removed, and a metallayer 122 is formed to cover the gate electrode layer 110 a, thesidewall insulating layers 118, the pair of high concentration impurityregions 120 a and 120 b, and the like (see FIG. 12E). The metal layer122 can be formed by a variety of film formation methods, such as avacuum evaporation method, a sputtering method, or a spin coatingmethod. It is preferable that the metal layer 122 be formed using ametal material that reacts with a semiconductor material included in thesemiconductor region 104 to be a metal compound having low resistance.Examples of such metal materials include titanium, tantalum, tungsten,nickel, cobalt, and platinum.

Next, heat treatment is performed, so that the metal layer 122 reactswith the semiconductor material. By this heat treatment, the pair ofmetal compound regions 124 a and 124 b in contact with the pair of highconcentration impurity regions 120 a and 120 b are formed (see FIG.12F). In the case where polycrystalline silicon or the like is used forthe gate electrode layer 110 a, a portion of the gate electrode layer110 a which is in contact with the metal layer 122 also becomes a metalcompound region.

As the heat treatment, irradiation with a flash lamp can be employed.Although it is needless to say that another heat treatment method may beused, a method by which heat treatment for an extremely short time canbe achieved is preferably used in order to improve the controllabilityof chemical reaction in formation of the metal compound. Note that themetal compound region is formed by reaction of the metal material andthe semiconductor material, which is a region having sufficientlyincreased conductivity. The formation of the metal compound regions canproperly reduce electric resistance and improve element characteristics.Note that the metal layer 122 is removed after the pair of metalcompound regions 124 a and 124 b are formed.

Next, the interlayer insulating layer 126 and the interlayer insulatinglayer 128 are formed so as to cover the components formed in the abovesteps (see FIG. 12G). The interlayer insulating layers 126 and 128 canbe formed using a material including an inorganic insulating material,such as silicon oxide, silicon nitride oxide, silicon nitride, hafniumoxide, aluminum oxide, or tantalum oxide. Alternatively, an organicinsulating material such as polyimide or acrylic can be used. Althoughthe interlayer insulating layer here has a structure including twolayers of the interlayer insulating layer 126 and the interlayerinsulating layer 128, the structure of the interlayer insulating layeris not limited thereto. After formation of the interlayer insulatinglayer 128, a surface is preferably planarized by CMP treatment, etchingtreatment, or the like.

After that, openings reaching the pair of metal compound regions 124 aand 124 b are formed in the interlayer insulating layers, and the sourceelectrode layer 130 a and the drain electrode layer 130 b are formed inthe openings (see FIG. 12H). A conductive layer is formed by a PVDmethod, a CVD method, or the like in a region including the openings,and part of the conductive layer is removed by etching treatment or CMPtreatment, so that the source electrode layer 130 a and the drainelectrode layer 130 b can be formed.

It is preferable that the source electrode layer 130 a and the drainelectrode layer 130 b be formed to have a planar surface. For example,after a thin film of a titanium film or a titanium nitride film isformed in a region including the openings, a tungsten film is formed tofill the openings. In that case, unnecessary tungsten and unnecessarytitanium or titanium nitride is removed by CMP treatment, and planarityof the surface can be improved. In such a manner, the surface includingthe source electrode layer 130 a and the drain electrode layer 130 b isplanarized, whereby an electrode, a wiring, an insulating layer, asemiconductor layer, or the like can be preferably formed in the laterstep.

Note that here, only the source electrode layer 130 a and the drainelectrode layer 130 b which are in contact with the metal compoundregions 124 a and 124 b are illustrated; however, an electrode layerserving as a wiring (e.g., the electrode layer 130 c in FIG. 11) or thelike can be formed together in this step. There is no particularlimitation on a material for forming the source electrode layer 130 aand the drain electrode layer 130 b, and a variety of conductivematerials can be used. For example, a conductive material such asmolybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper,neodymium, or scandium can be used.

Through the above steps, the p-channel transistor 160 with the substrate100 including a semiconductor material is completed. After the abovesteps, an electrode, a wiring, an insulating layer, or the like may befurther formed. When the wiring has a multilayer wiring structure whichis a stacked structure including an interlayer insulating layer and aconductive layer, a highly-integrated logic circuit can be provided.Further, by a step similar to the above steps, an n-channel transistorwith the substrate 100 including a semiconductor material can be formed.That is, by using an impurity element such as phosphorus (P) or arsenic(As) as the impurity element added to the semiconductor region in theabove step, an n-channel transistor can be formed.

Next, a manufacturing process of the n-channel transistor 164 over theinterlayer insulating layer 128 is described with reference to FIGS. 13Ato 13G and FIGS. 14A to 14D. Note that FIGS. 13A to 13G and FIGS. 14A to14D illustrate a manufacturing process of various electrode layers, then-channel transistor 164, and the like over the interlayer insulatinglayer 128; accordingly, the p-channel transistor 160 and the likeprovided below the n-channel transistor 164 are omitted.

First, the insulating layer 132 is formed over the interlayer insulatinglayer 128, the source electrode layer 130 a, the drain electrode layer130 b, and the electrode layer 130 c (see FIG. 13A). The insulatinglayer 132 can be formed by a PVD method, a CVD method, or the like. Theinsulating layer 132 can be formed using a material including aninorganic insulating material such as silicon oxide, silicon nitrideoxide, silicon nitride, hafnium oxide, aluminum oxide, or tantalumoxide.

Next, openings reaching the source electrode layer 130 a, the drainelectrode layer 130 b, and the electrode layer 130 c are formed in theinsulating layer 132. At this time, an opening is formed also in aregion where the gate electrode layer 136 d is formed later. Aconductive layer 134 is formed so as to fill the openings (FIG. 13B).The openings can be formed by a method such as etching with use of amask or the like. The mask can be formed by a method such as exposurewith use of a photomask or the like. Either wet etching or dry etchingcan be used as the etching; in view of microfabrication, dry etching ispreferable. The conductive layer 134 can be formed by a film formationmethod of a PVD method, a CVD method, or the like. A material used forformation of the conductive layer 134 can be a conductive material suchas molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper,neodymium, or scandium, an alloy thereof, a compound such as nitrideincluding the above material, or the like.

More specifically, a method can be employed as an example, in which: athin film of titanium is formed by a PVD method in a region includingthe openings; a thin film of nitride titanium is formed by a CVD method;and a tungsten film is formed to fill the openings. Here, the titaniumfilm formed by a PVD method has a function to deoxidize an oxide film atan interface so as to reduce contact resistance with the lower electrodelayers (here, the source electrode layer 130 a, the drain electrodelayer 130 b, the electrode layer 130 c, and the like). The titaniumnitride film formed after that has a barrier function to suppressdiffusion of a conductive material. Further, after the barrier film oftitanium, titanium nitride, or the like is formed, a copper film may beformed by a plating method.

After the conductive layer 134 is formed, part of the conductive layer134 is removed by etching treatment, CMP treatment, or the like, so thatthe insulating layer 132 is exposed; accordingly, the electrode layer136 a, the electrode layer 136 b, the electrode layer 136 c, and thegate electrode layer 136 d are formed (see FIG. 13C). Note that when theelectrode layer 136 a, the electrode layer 136 b, the electrode layer136 c, and the gate electrode layer 136 d are formed by removing part ofthe conductive layer 134, it is preferable that a planar surface beformed. By planarizing the surfaces of the insulating layer 132, theelectrode layer 136 a, the electrode layer 136 b, the electrode layer136 c, and the gate electrode layer 136 d, an electrode, a wiring, aninsulating layer, a semiconductor layer, or the like can be preferablyformed in the later step.

Next, the gate insulating layer 138 is formed to cover the insulatinglayer 132, the electrode layer 136 a, the electrode layer 136 b, theelectrode layer 136 c, and the gate electrode layer 136 d (see FIG.13D). The gate insulating layer 138 can be formed by a CVD method, asputtering method, or the like. Further, the gate insulating layer 138is preferably formed to include silicon oxide, silicon nitride, siliconoxynitride, silicon nitride oxide, aluminum oxide, hafnium oxide,tantalum oxide, or the like. Note that the gate insulating layer 138 mayhave a single-layer structure or a stacked-layer structure. For example,the gate insulating layer 138 can be formed using silicon oxynitirde bya plasma CVD method in which silane (SiH₄), oxygen, and nitride are usedas a source gas. There is no particular limitation on the thickness ofthe gate insulating layer 138, but it can be formed to a thicknesslarger than or equal to 10 nm and smaller than or equal to 500 nm, forexample. In the case of a stacked-layer structure, a preferablestructure includes a first gate insulating layer with a thickness largerthan or equal to 50 nm and smaller than or equal to 200 nm and a secondgate insulating layer with a thickness larger than or equal to 5 nm andsmaller than or equal to 300 nm thereover.

An i-type or substantially i-type oxide semiconductor achieved byremoval of impurities (a highly-purified oxide semiconductor) isextremely sensitive to interface state density or interface charge.Therefore, an interface between an oxide semiconductor layer and a gateinsulating layer is an important factor in the case where such an oxidesemiconductor is used for the oxide semiconductor layer. In other words,the gate insulating layer 138 which is in contact with thehighly-purified oxide semiconductor layer needs to be of high quality.

For example, high-density plasma CVD using μ waves (2.45 GHz) ispreferable in that it produces a dense and high-quality gate insulatinglayer 138 with high withstand voltage. This is because a close contactbetween a highly-purified oxide semiconductor layer and a high-qualitygate insulating layer reduces interface state density and producesdesirable interface characteristics.

Needless to say, even when a highly-purified oxide semiconductor layeris used, another method such as a sputtering method or a plasma CVDmethod is applicable if a high-quality insulating layer can be used as agate insulating layer. An insulating layer whose film quality orinterface characteristic is modified by heat treatment after filmformation may be employed. In any case, the gate insulating layer 138may employ a layer whose film quality is preferable and interface statedensity of an interface with the oxide semiconductor layer is reduced toform an excellent interface.

Further, when the bias temperature test (BT test) at 85° C. for 12 hourswith 2×10⁶ V/cm is performed in the case where an oxide semiconductorincludes an impurity, a bond between the impurity and the main componentof the oxide semiconductor is cut by a strong electric field (B: bias)and a high temperature (T: temperature), and a generated dangling bondinduces a shift in the threshold voltage (Vth).

On the other hand, when an impurity in an oxide semiconductor,especially hydrogen, water, or the like is removed as much as possibleso that an interface with the gate insulating layer can have preferablecharacteristics, a transistor which is stable to the BT test can beobtained.

Next, an oxide semiconductor layer is formed over the gate insulatinglayer 138 and processed by a method such as etching using a mask,whereby the island-shaped oxide semiconductor layer 140 is formed (seeFIG. 13E).

As the oxide semiconductor layer, an In—Ga—Zn—O-based oxidesemiconductor layer, an In—Sn—Zn—O-based oxide semiconductor layer, anIn—Al—Zn—O-based oxide semiconductor layer, a Sn—Ga—Zn—O-based oxidesemiconductor layer, an Al—Ga—Zn—O-based oxide semiconductor layer, aSn—Al—Zn—O-based oxide semiconductor layer, an In—Zn—O-based oxidesemiconductor layer, a Sn—Zn—O-based oxide semiconductor layer, anAl—Zn—O-based oxide semiconductor layer, an an In—O-based oxidesemiconductor layer, a Sn—O-based oxide semiconductor layer, or aZn—O-based oxide semiconductor layer is used. In particular, anamorphous oxide semiconductor layer is preferable. In this embodiment,an amorphous oxide semiconductor layer is formed as the oxidesemiconductor layer by a sputtering method with use of anIn—Ga—Zn—O-based metal oxide target. The addition of silicon to anamorphous oxide semiconductor layer suppress the crystallization of thelayer; therefore, the oxide semiconductor layer may be formed using atarget containing SiO₂ at 2 wt % to 10 wt % inclusive.

As a target for forming the oxide semiconductor layer by a sputteringmethod, a metal oxide target containing zinc oxide as a main componentcan be used, for example. Alternatively, a metal oxide target containingIn, Ga, and Zn (a composition ratio is In₂O₃:Ga₂O₃:ZnO=1:1:1 [molarratio], In:Ga:Zn=1:1:0.5 [atomic ratio]) can be used. As the metal oxidetarget containing In, Ga, and Zn, a target having a composition ratio ofIn:Ga:Zn=1:1:1 [atomic ratio] or a target having a composition ratio ofIn:Ga:Zn=1:1:2 [atomic ratio] can also be used. The filling factor ofthe metal oxide target is from 90% to 100% inclusive, and preferably 95%or higher (e.g., 99.9%). With use of a metal oxide target with highfilling factor, an oxide semiconductor layer which is a dense film canbe formed.

A preferable atmosphere for formation of the oxide semiconductor layeris a rare gas (typically argon) atmosphere, an oxygen atmosphere, or amixed atmosphere of a rare gas (typically argon) and oxygen.Specifically, a high-purity gas is preferably used, in which an impuritysuch as hydrogen, water, hydroxyl, or hydride is reduced toapproximately several parts per million (ppm) (preferably approximatelyseveral parts per billion (ppb)).

In formation of the oxide semiconductor layer, the substrate is set in achamber at reduced pressure and the substrate temperature is set at 100°C. to 600° C. inclusive, preferably 200° C. to 400° C. inclusive.Depositing while heating the substrate can reduce the concentration ofimpurity in the oxide semiconductor layer. In addition, damage bysputtering can be reduced. Then, a sputtering gas from which hydrogenand moisture are removed is introduced into the treatment chamber fromwhich remaining moisture is being removed, and an oxide semiconductorlayer is deposited over the substrate with use of a metal oxide as atarget. In order to remove residual moisture in the treatment chamber,an entrapment vacuum pump is preferably used. For example, a cryopump,an ion pump, or a titanium sublimation pump is preferably used. Theevacuation unit may be a turbo pump provided with a cold trap. In thetreatment chamber which is evacuated with use of the cryopump, ahydrogen atom, a compound containing a hydrogen atom such as water (H₂O)(further preferably, a compound containing a carbon atom), and the likeare removed, whereby the impurity concentration in the oxidesemiconductor layer formed in the treatment chamber can be reduced.

As an example of a deposition condition, the distance between thesubstrate and the target is 100 mm, the pressure is 0.6 Pa, the directcurrent (DC) power supply is 0.5 kW, and an atmosphere of deposition isan oxygen (the proportion of oxygen flow is 100%) atmosphere. Note thata pulsed direct current (DC) power supply is preferably used becausepowder substances (also referred to as particles or dust) generated infilm deposition can be reduced and the film thickness can be uniform.The thickness of the oxide semiconductor layer is 2 nm to 200 nminclusive, preferably 5 nm to 30 nm inclusive. Note that an appropriatethickness differs depending on an oxide semiconductor material, and thethickness may be set as appropriate depending on the material.

Note that before the oxide semiconductor layer is formed by a sputteringmethod, dust on a surface of the gate insulating layer 138 is preferablyremoved by reverse sputtering in which an argon gas is introduced andplasma is generated. The reverse sputtering refers to a method in whichinstead of making ions collide to a sputtering target in generalspurting, ions are made to collide to a surface to be treated so thatthe surface is modified. A method for making ions collide to a surfaceto be treated includes a method in which high frequency voltage isapplied on the surface in an argon atmosphere and plasma is generated inthe vicinity of the substrate. Note that a nitrogen atmosphere, a heliumatmosphere, an oxygen atmosphere, or the like may be used instead of anargon atmosphere.

The etching of the oxide semiconductor layer can be either dry etchingor wet etching. Needless to say, both dry etching and wet etching can becombined and used. Etching conditions (such as etching gas, etchant,etching time, and temperature) are appropriately adjusted in accordancewith the material, so that the oxide semiconductor layer can beprocessed into the desired shape.

For example, a gas containing chlorine (a chlorine-based gas such aschlorine (Cl₂), boron chloride (BCl₃), tetrasilicon chloride (SiCl₄), orcarbon tetrachloride (CCl₄)) can be employed as an etching gas used forthe dry etching. Alternatively, a gas containing fluorine (afluorine-based gas such as carbon tetrafluoride (CF₄), sulfur fluoride(SF₆), nitrogen fluoride (NF₃), or trifluoromethane (CHF₃)); hydrogenbromide (HBr); oxygen (O₂); any of these gases to which a rare gas suchas helium (He) or argon (Ar) is added; or the like can be used.

As the dry etching method, a parallel plate RIE (reactive ion etching)method or an ICP (inductively coupled plasma) etching method can beused. In order to etch the layer into desired shapes, the etchingcondition (the amount of electric power applied to a coil-shapedelectrode, the amount of electric power applied to an electrode on asubstrate side, the temperature of the electrode on the substrate side,or the like) is adjusted as appropriate.

As an etchant used for wet etching, a mixed solution of phosphoric acid,acetic acid, and nitric acid, or the like can be used. Alternatively, anetchant such as ITO-07N (produced by KANTO CHEMICAL CO., INC.) may beused.

Next, first heat treatment is preferably performed on the oxidesemiconductor layer. By the first heat treatment, the oxidesemiconductor layer can be dehydrated or dehydrogenated. The temperatureof the first heat treatment is higher than or equal to 300° C. and lowerthan or equal to 750° C., preferably higher than or equal to 400° C. andlower than a strain point of the substrate. For example, the substrateis introduced into an electric furnace using a resistance heatingelement or the like, and the oxide semiconductor layer 140 is subjectedto heat treatment at 450° C. for one hour in a nitrogen atmosphere.During the heat treatment, the oxide semiconductor layer 140 is notexposed to air to prevent entry of water or hydrogen.

Note that a heat treatment apparatus is not limited to an electricalfurnace, and may be an apparatus which heats an object to be processedwith heat conduction or heat radiation given by a medium such as aheated gas or the like. For example, a rapid thermal annealing (RTA)apparatus such as a gas rapid thermal annealing (GRTA) apparatus or alamp rapid thermal annealing (LRTA) apparatus can be used. An LRTAapparatus is an apparatus for heating an object to be processed byradiation of light (an electromagnetic wave) emitted from a lamp such asa halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arclamp, a high pressure sodium lamp, or a high pressure mercury lamp. AGRTA apparatus is an apparatus for heat treatment using ahigh-temperature gas. As the gas, an inert gas which does not react withan object to be processed by heat treatment, such as nitrogen or a raregas such as argon is used.

For example, as the first heat treatment, GRTA may be performed asfollows. The substrate is placed in an inert gas which has been heatedto a high temperature of 650° C. to 700° C., heated for several minutes,and transferred and taken out from the heated inert gas. With GRTA,high-temperature heat treatment for a short period of time can beachieved. Further, GRTA is heat treatment for a short period of time;therefore, it can be employed even under a temperature condition whichis higher than a strain point of the substrate.

Note that the first heat treatment is preferably performed in anatmosphere which contains nitrogen or a rare gas (e.g., helium, neon, orargon) as its main component and does not contain water, hydrogen, orthe like. For example, the purity of nitrogen or a rare gas such ashelium, neon, or argon introduced into a heat treatment apparatus isgreater than or equal to 6 N (99.9999%), preferably greater than orequal to 7 N (99.99999%) (that is, the concentration of the impurity isless than or equal to 1 ppm, preferably less than or equal to 0.1 ppm).

Depending on conditions of the first heat treatment or a material of theoxide semiconductor layer, the oxide semiconductor layer is crystallizedand to be a microcrystalline film or a polycrystalline film in somecases. For example, the oxide semiconductor layers may crystallize tobecome microcrystalline semiconductor layers having a degree ofcrystallization of 90% or more, or 80% or more. Further, depending onthe conditions of the first heat treatment and the material of the oxidesemiconductor layer, the oxide semiconductor layer becomes an amorphousoxide semiconductor layer containing no crystalline component in othercases.

The oxide semiconductor layer might become an oxide semiconductor layerin which a microcrystalline portion (with a grain diameter greater thanor equal to 1 nm and less than or equal to 20 nm, typically greater thanor equal to 2 nm and less than or equal to 4 nm) exits in an amorphousoxide semiconductor (for example, a surface of the oxide semiconductorlayer).

Further, when microcrystal is aligned in amorphous, electriccharacteristics of the oxide semiconductor layer can be changed. Forexample, in the case where the oxide semiconductor layer is formed usingan In—Ga—Zn—O-based metal oxide target, a microcrystalline portion wherecrystal grains of In₂Ga₂ZnO₇ having electrical anisotropy are aligned isformed, whereby the electric characteristics of the oxide semiconductorlayer can be changed.

More specifically, by aligning crystal grains of In₂Ga₂ZnO₇ whose c-axisis in the direction perpendicular to a surface of the oxidesemiconductor layer, conductivity in the direction parallel to thesurface of the oxide semiconductor layer can be increased, and aninsulating property in the direction perpendicular to the surface of theoxide semiconductor layer can be increased. Further, such amicrocrystalline portion has a function of preventing an impurity suchas water or hydrogen from entering the oxide semiconductor layer.

Note that the oxide semiconductor layer including the above-describedmicrocrystalline portion can be obtained by heating a surface of theoxide semiconductor layer by GRTA. The use of a sputtering target thatcontains more In or Ga than Zn enables a much preferable oxidesemiconductor layer to be formed.

The first heat treatment may be performed on the oxide semiconductorlayer which has not been processed into the island-shaped oxidesemiconductor layer 140. In that case, after the first heat treatment,the substrate is taken out from the heating apparatus and aphotolithography step is performed.

Note that the first heat treatment can also be called dehydrationtreatment or dehydrogenation treatment because it is effective indehydrating or dehydrogenating the oxide semiconductor layer 140. It ispossible to perform such dehydration treatment or dehydrogenationtreatment after forming the oxide semiconductor layer, after stackingsource and drain electrode layers over the oxide semiconductor layer140, or after forming a protective insulating layer over the source anddrain electrode layers. Such dehydration treatment or dehydrogenationtreatment may be conducted more than once.

Next, the source electrode layer 142 a and the drain electrode layer 142b are formed so as to be in contact with the oxide semiconductor layer140 (see FIG. 13F). A conductive layer is formed to cover the oxidesemiconductor layer 140 and then partly etched, so that the sourceelectrode layer 142 a and the drain electrode layer 142 b can be formed.

The conductive layer can be formed by a CVD method such as a plasma CVDmethod or a PVD method including sputtering. Examples of the materialfor the conductive layer include an element selected from aluminum,chromium, copper, tantalum, titanium, molybdenum, and tungsten; and analloy including any of these elements as a component. Alternatively, oneor more of materials selected from manganese, magnesium, zirconium,beryllium, and thorium may be alternatively used. Further alternatively,aluminum combined with one or more of elements selected from titanium,tantalum, tungsten, molybdenum, chromium, neodymium, and scandium may beused as the material. The conductive layer may have either asingle-layer structure or a staked-layer structure of two or morelayers. For example, a single-layer structure of an aluminum filmcontaining silicon, a two-layer structure in which a titanium film isstacked over an aluminum film, a three-layer structure in which atitanium film, an aluminum film, and a titanium film are stacked in thisorder, and the like can be given.

Here, ultraviolet rays, a KrF laser beam, or an ArF laser beam ispreferably used for exposures for making an etching mask.

The channel length (L) of the transistor is determined by the distancebetween the bottom portion of the source electrode layer 142 a and thebottom portion of the drain electrode layer 142 b. In the case where thechannel length (L) is shorter than 25 nm, exposure for making a mask isperformed with use of extreme ultraviolet with extremely shortwavelengths of several nanometers to several tens of nanometers.Exposure with extreme ultraviolet yields high resolution and a greatdepth of focus. Therefore, the channel length (L) of a transistor, whichis formed later, can be from 10 nm to 1000 nm inclusive, and thus theoperation rate of the circuit can be increased.

The materials for the conductive layer and the oxide semiconductor layer140 and etching conditions are adjusted as appropriate so that the oxidesemiconductor layer is not removed in etching of the conductive layer.In this step, the oxide semiconductor layer 140 is partly etched to bean oxide semiconductor layer having a groove (a depressed portion)depending on the materials and the etching conditions.

An oxide conductive layer may be formed between the oxide semiconductorlayer 140 and the source electrode layer 142 a or between the oxidesemiconductor layer 140 and the drain electrode layer 142 b. It ispossible to successively form the oxide conductive layer and a metallayer which is to be the source electrode layer 142 a or the drainelectrode layer 142 b (successive deposition). The oxide conductivelayer can function as a source region or a drain region. Such an oxideconductive layer leads to the reduction in the resistance of the sourceregion or a drain region, and thus high-speed operation of thetransistor is achieved.

In order to reduce the number of the masks used or the number of steps,a resist mask is formed with use of a multi-tone mask which is alight-exposure mask through which light is transmitted to have aplurality of intensities, and etching may be performed with use of theresist mask. Since a resist mask formed using a multi-tone mask has aplurality of thicknesses (step-like shape) and can be further changed inshape by performing ashing, the resist mask can be used in a pluralityof etching steps to provide different patterns. Therefore, a resist maskcorresponding to at least two kinds of different patterns can be formedby using a multi-tone mask. Thus, the number of light-exposure masks canbe reduced and the number of corresponding photolithography steps canalso be reduced, whereby simplification of steps can be realized.

Note that plasma treatment using a gas such as N₂O, N₂, or Ar ispreferably conducted after the above process. The plasma treatmentremoves water or the like that adheres to an exposed surface of theoxide semiconductor layer. In the plasma treatment, a mixed gas ofoxygen and argon may be used.

Next, the protective insulating layer 144 which is in contact with partof the oxide semiconductor layer 140 is formed without being exposed toair (see FIG. 13G).

The protective insulating layer 144 can be formed using as appropriate amethod, such as a sputtering method, by which an impurity such as wateror hydrogen is prevented from entering the protective insulating layer144. The thickness of the protective insulating layer 144 is at least 1nm or larger. Examples of the material for the protective insulatinglayer 144 include silicon oxide, silicon nitride, silicon oxynitride,and silicon nitride oxide. A structure can be either a single-layerstructure or a stacked-layer structure. The substrate temperature forthe deposition of the protective insulating layer 144 is preferablyhigher than or equal to room temperature and lower than or equal to 300°C. The atmosphere for the deposition is preferably a rare gas (typicallyargon) atmosphere, an oxygen atmosphere, or a mixed atmosphere of a raregas (typically argon) and oxygen.

When hydrogen is contained in the protective insulating layer 144, entryof the hydrogen to the oxide semiconductor layer 140 or extraction ofoxygen in the oxide semiconductor layer 140 by the hydrogen is caused,thereby making the resistance on the backchannel side of the oxidesemiconductor layer 140 low, so that a parasitic channel may be formed.Therefore, it is important that a film formation method in whichhydrogen is not used be employed in order to form the protectiveinsulating layer 144 containing as little hydrogen as possible.

It is preferable to form the protective insulating layer 144 whileremoving moisture remaining in the treatment chamber, in order toprevent hydrogen, hydroxyl, or moisture from being entered into theoxide semiconductor layer 140 and the protective insulating layer 144.

In order to remove residual moisture in the treatment chamber, anentrapment vacuum pump is preferably used. For example, a cryopump, anion pump, or a titanium sublimation pump is preferably used. Theevacuation unit may be a turbo pump provided with a cold trap. In thetreatment chamber which is evacuated with use of the cryopump, ahydrogen atom, a compound containing a hydrogen atom such as water(H₂O), and the like are removed, whereby the impurity concentration inthe protective insulating layer 144 formed in the treatment chamber canbe reduced.

A sputtering gas used for the deposition of the protective insulatinglayer 144 is preferably a high-purity gas in which the concentration ofan impurity such as hydrogen, water, hydroxyl, or hydride is reduced toapproximately several parts per million (ppm) (preferably approximatelyseveral parts per billion (ppb)).

Next, second heat treatment is preferably performed in an inert gasatmosphere or oxygen gas atmosphere (preferably at from 200° C. to 400°C. inclusive, e.g. 250° C. to 350° C. inclusive). For example, thesecond heat treatment is performed in a nitrogen atmosphere at 250° C.for one hour. The second heat treatment can reduce variations inelectric characteristics of transistors.

Further, heat treatment may be performed at 100° C. to 200° C. inclusivefor from one hour to 30 hours in air. This heat treatment may beperformed at a fixed heating temperature. Alternatively, the followingchange in the heating temperature may be conducted plural timesrepeatedly: the heating temperature is increased from room temperatureto a temperature of 100° C. to 200° C. inclusive and then decreased toroom temperature. Further, this heat treatment may be performed beforeformation of the protective insulating layer under reduced pressure.Under reduced pressure, the heating time can be shortened. Note thatthis heat treatment may be performed instead of the second heattreatment or performed before and after the second heat treatment.

Next, the interlayer insulating layer 146 is formed over the protectiveinsulating layer 144 (see FIG. 14A). The interlayer insulating layer 146can be formed by a PVD method, a CVD method, or the like. The interlayerinsulating layer 146 can be formed using a material including aninorganic insulating material, such as silicon oxide, silicon nitrideoxide, silicon nitride, hafnium oxide, aluminum oxide, or tantalumoxide. After formation of the interlayer insulating layer 146, it ispreferable that a surface be planarized by CMP, etching, or the like.

Next, openings reaching the electrode layer 136 a, the electrode layer136 b, the electrode layer 136 c, the source electrode layer 142 a, andthe drain electrode layer 142 b are formed in the interlayer insulatinglayer 146, the protective insulating layer 144, and the gate insulatinglayer 138. Then, a conductive layer 148 is formed so as to fill theopenings (see FIG. 14B). The openings can be formed by etching using amask. The mask can be made by exposures with use of a photomask, forexample. Either wet etching or dry etching can be used as the etching;in view of microfabrication, dry etching is preferably used. Theconductive layer 148 can be formed by a deposition method such as a PVDmethod or a CVD method. Examples of the material for the conductivelayer 148 include a conductive material such as molybdenum, titanium,chromium, tantalum, tungsten, aluminum, copper, neodymium, and scandium;and an alloy and compound (e.g., nitride) of any of these materials.

Specifically, as an example, a method can be employed in which: a thinfilm of titanium is formed by a PVD method in a region including theopenings; a thin film of nitride titanium is formed by a CVD method; anda tungsten film is formed to fill the openings. Here, the titanium filmformed by a PVD method deoxidizes an oxide film at an interface so as toreduce contact resistance with the lower electrode layers (here, theelectrode layer 136 a, the electrode layer 136 b, the electrode layer136 c, the source electrode layer 142 a, and the drain electrode layer142 b). The titanium nitride film formed after that has a barrierfunction to suppress diffusion of a conductive material. Further, afterthe barrier film of titanium, titanium nitride, or the like is formed, acopper film may be formed by a plating method.

After the conductive layer 148 is formed, part of the conductive layer148 is removed by etching, CMP, or the like, and the interlayerinsulating layer 146 is thus exposed, thereby forming the electrodelayer 150 a, the electrode layer 150 b, the electrode layer 150 c, theelectrode layer 150 d, and the electrode layer 150 e (see FIG. 14C).Note that when the electrode layer 150 a, the electrode layer 150 b, theelectrode layer 150 c, the electrode layer 150 d, and the electrodelayer 150 e are formed by removing part of the conductive layer 148, itis preferable that a planar surface be formed. By planarizing thesurface of the interlayer insulating layer 146, the electrode layer 150a, the electrode layer 150 b, the electrode layer 150 c, the electrodelayer 150 d, and the electrode layer 150 e, an electrode, a wiring, aninsulating layer, a semiconductor layer, or the like can be preferablyformed in the later step.

Further, the insulating layer 152 is formed, and openings reaching theelectrode layer 150 a, the electrode layer 150 b, the electrode layer150 c, the electrode layer 150 d, and the electrode layer 150 e areformed in the insulating layer 152. Then, a conductive layer is formedso as to fill the openings. After that, part of the conductive layer isremoved by etching, CMP, or the like, and the insulating layer 152 isthus exposed, thereby forming an electrode layer 154 a, an electrodelayer 154 b, an electrode layer 154 c, and an electrode layer 154 d (seeFIG. 14D). This process is similar to the process for formation of theelectrode layer 150 a and the like; thus, detailed description isomitted.

When the n-channel transistor 164 is formed in the above manner, thehydrogen concentration of the oxide semiconductor layer 140 is 5×10¹⁹(atoms/cm³) or lower, and the off-state current of the n-channeltransistor 164 is 1×10⁻¹³ [A] or lower. Such an n-channel transistor 164having excellent characteristics is used in the logic circuits describedin Embodiments 1 to 6, whereby reduction in standby power and suppressof malfunction of the logic circuit can be achieved.

Modification Example

FIG. 15, FIGS. 16A and 16B, FIGS. 17A and 17B, and FIGS. 18A and 18Billustrate modification examples of structures of the n-channeltransistor 164. Each structure of the transistor 160 illustrated in FIG.15, FIGS. 16A and 16B, FIGS. 17A and 17B, and FIGS. 18A and 18B is thesame as that in FIG. 11.

FIG. 15 illustrates an example of the n-channel transistor 164 having astructure in which the gate electrode layer 136 d is placed below theoxide semiconductor layer 140 and end portions of the source electrodelayer 142 a and the drain electrode layer 142 b are in contact with theoxide semiconductor layer 140.

A big difference between the structure in FIG. 11 and the structure inFIG. 15 is the position at which the oxide semiconductor layer 140 isconnected to the source and drain electrode layers 142 a and 142 b. Thatis, a top surface of the oxide semiconductor layer 140 is in contactwith the source and drain electrode layers 142 a and 142 b in thestructure in FIG. 11, whereas the bottom surface of the oxidesemiconductor layer 140 is in contact with the source and drainelectrode layers 142 a and 142 b in the structure in FIG. 15. Moreover,the difference in the contact position results in a differentarrangement of other electrodes, an insulating layer, and the like. Thedetails of each component are the same as those of FIG. 11.

Specifically, the n-channel transistor 164 illustrated in FIG. 15includes the gate electrode layer 136 d provided over the interlayerinsulating layer 128, the gate insulating layer 138 provided over thegate electrode layer 136 d, the source and drain electrode layers 142 aand 142 b provided over the gate insulating layer 138, and the oxidesemiconductor layer 140 in contact with top surfaces of the source anddrain electrode layers 142 a and 142 b. In addition, over the n-channeltransistor 164, the protective insulating layer 144 is provided so as tocover the oxide semiconductor layer 140.

FIGS. 16A and 16B each illustrate an n-channel transistor 164 in whichthe gate electrode layer 136 d is provided over the oxide semiconductorlayer 140. FIG. 16A illustrates an example of a structure in which thesource and drain electrode layers 142 a and 142 b are in contact with abottom surface of the oxide semiconductor layer 140. FIG. 16Billustrates an example of a structure in which the source and drainelectrode layers 142 a and 142 b are in contact with a top surface ofthe oxide semiconductor layer 140.

A big difference of the structures in FIGS. 16A and 16B from those inFIG. 11 and FIG. 15 is that the gate electrode layer 136 d is placedover the oxide semiconductor layer 140. Furthermore, a big differencebetween the structure in FIG. 16A and the structure in FIG. 16B is thatthe source and drain electrode layers 142 a and 142 b are in contactwith either the bottom surface or the top surface of the oxidesemiconductor layer 140. Moreover, these differences result in adifferent arrangement of other electrodes, an insulating layer, and thelike. The details of each component are the same as those of FIG. 11,and the like.

Specifically, the n-channel transistor 164 illustrated in FIG. 16Aincludes the source and drain electrode layers 142 a and 142 b providedover the interlayer insulating layer 128, the oxide semiconductor layer140 in contact with top surfaces of the source and drain electrodelayers 142 a and 142 b, the gate insulating layer 138 provided over theoxide semiconductor layer 140, and the gate electrode layer 136 d overthe gate insulating layer 138 in a region overlapping with the oxidesemiconductor layer 140.

The n-channel transistor 164 illustrated in FIG. 16B includes the oxidesemiconductor layer 140 provided over the interlayer insulating layer128, the source and drain electrode layers 142 a and 142 b provided tobe in contact with a top surface of the oxide semiconductor layer 140,the gate insulating layer 138 provided over the oxide semiconductorlayer 140 and the source and drain electrode layers 142 a and 142 b, andthe gate electrode layer 136 d provided over the gate insulating layer138 and in a region overlapping with the oxide semiconductor layer 140.

Note that in the structures in FIGS. 16A and 16B, a component (e.g., theelectrode layer 150 a or the electrode layer 154 a) is sometimes omittedfrom the structure in FIG. 11 or the like. In this case, a secondaryeffect such as simplification of a manufacturing process can beobtained. It is needless to say that a nonessential component can beomitted in the structures also in FIG. 11 and the like.

FIGS. 17A and 17B each illustrate the n-channel transistor 164 in thecase where the size of the element is relatively large and the gateelectrode layer 136 d is placed below the oxide semiconductor layer 140.In this case, a demand for the planarity of a surface and the coverageis relatively moderate, so that it is not necessary to form a wiring, anelectrode, and the like to be embedded in an insulating layer. Forexample, the gate electrode layer 136 d and the like can be formed bypatterning after formation of a conductive layer.

A big difference between the structure in FIG. 17A and the structure inFIG. 17B is that the source and drain electrode layers 142 a and 142 bare in contact with either the bottom surface or the top surface of theoxide semiconductor layer 140. Moreover, these differences result inother electrodes, an insulating layer, and the like being arranged in adifferent manner. The details of each component are the same as those ofFIG. 11, and the like.

Specifically, the n-channel transistor 164 illustrated in FIG. 17Aincludes the gate electrode layer 136 d provided over the interlayerinsulating layer 128, the gate insulating layer 138 provided over thegate electrode layer 136 d, the source and drain electrode layers 142 aand 142 b provided over the gate insulating layer 138, and the oxidesemiconductor layer 140 in contact with top surfaces of the source anddrain electrode layers 142 a and 142 b.

Further, the n-channel transistor 164 illustrated in FIG. 17B includesthe gate electrode layer 136 d provided over the interlayer insulatinglayer 128, the gate insulating layer 138 provided over the gateelectrode layer 136 d, the oxide semiconductor layer 140 provided overthe gate insulating layer 138 so as to overlap with the gate electrodelayer 136 d, and the source and drain electrode layers 142 a and 142 bprovided to be in contact with a top surface of the oxide semiconductorlayer 140.

Note that also in the structures in FIGS. 17A and 17B, a component issometimes omitted from the structure in FIG. 11 or the like. Also inthis case, a secondary effect such as simplification of a manufacturingprocess can be obtained.

FIGS. 18A and 18B each illustrate the n-channel transistor 164 in thecase where the size of the element is relatively large and the gateelectrode layer 136 d is placed over the oxide semiconductor layer 140.Also in this case, a demand for the planarity of a surface and thecoverage is relatively moderate, so that it is not necessary to form awiring, an electrode, and the like to be embedded in an insulatinglayer. For example, the gate electrode layer 136 d and the like can beformed by patterning after formation of a conductive layer.

A big difference between the structure in FIG. 18A and the structure inFIG. 18B is that the source and drain electrode layers 142 a and 142 bare in contact with either the bottom surface or the top surface of theoxide semiconductor layer 140. Moreover, these differences result inother electrodes, an insulating layer, and the like being arranged in adifferent manner. The details of each component are the same as those ofFIG. 11, and the like.

Specifically, the n-channel transistor 164 illustrated in FIG. 18Aincludes the source and drain electrode layers 142 a and 142 b providedover the interlayer insulating layer 128, the oxide semiconductor layer140 in contact with top surfaces of the source and drain electrodelayers 142 a and 142 b, the gate insulating layer 138 provided over thesource and drain electrode layers 142 a and 142 b and the oxidesemiconductor layer 140, and the gate electrode layer 136 d providedover the gate insulating layer 138 so as to overlap with the oxidesemiconductor layer 140.

The n-channel transistor 164 illustrated in FIG. 18B includes the oxidesemiconductor layer 140 provided over the interlayer insulating layer128, the source and drain electrode layers 142 a and 142 b provided tobe in contact with a top surface of the oxide semiconductor layer 140,the gate insulating layer 138 provided over the source and drainelectrode layers 142 a and 142 b and the oxide semiconductor layer 140,and the gate electrode layer 136 d provided over the gate insulatinglayer 138 in a region overlapping with the oxide semiconductor layer140.

Note that also in the structures in FIGS. 18A and 18B, a component issometimes omitted from the structure in FIG. 11 or the like. Also inthis case, a secondary effect such as simplification of a manufacturingprocess can be obtained.

In this embodiment, the example in which the n-channel transistor 164 isformed over the p-channel transistor 160 to have a stacked structure isdescribed; however, the structures of the p-channel transistor 160 andthe n-channel transistor 164 are not limited to the above. For example,the p-channel transistor and the n-channel transistor can be formed overthe same planar surface. Further, a structure in which the p-channeltransistor 160 and the n-channel transistor 164 overlap with each othermay be employed.

The above-described n-channel transistor 164 is applied to the n-channeltransistor included in the logic circuits described in Embodiments 1 to6, whereby leakage of electric charges through the transistor can besuppressed. As a result, reduction in standby power and suppression ofmalfunction of the logic circuit can be achieved.

Note that the contents of this embodiment or part thereof can becombined freely with the contents of other embodiments or part thereofor the content of Example or part thereof.

Embodiment 8

In this embodiment, an example of a transistor included in any of thelogic circuits described in Embodiments 1 to 6 will be described.Specifically, an example of a thin film transistor in which a channelformation region is formed using an oxide semiconductor will bedescribed.

One embodiment of a thin film transistor and a manufacturing stepthereof in this embodiment are described with reference to FIGS. 19A and19B and FIGS. 20A to 20E.

FIGS. 19A and 19B respectively illustrate a planar structure and across-sectional structure of an example of a thin film transistor. Athin film transistor 460 illustrated in FIGS. 19A and 19B has a top-gatestructure.

FIG. 19A is a plan view of the top-gate thin film transistor 460, andFIG. 19B is a cross-sectional view along line D1-D2 of FIG. 19A.

Thin film transistor 460 includes, over a substrate 450 having aninsulating surface, an insulating layer 457, a source or drain electrodelayer 465 a (465 a 1 and 465 a 2), an oxide semiconductor layer 462, asource or drain electrode layer 465 b, a wiring layer 468, a gateinsulating layer 452, and a gate electrode layer 461 (461 a and 461 b).The source or drain electrode layer 465 a (465 a 1 and 465 a 2) iselectrically connected to a wiring layer 464 through the wiring layer468. Although not illustrated, the source or drain electrode layer 465 bis also electrically connected to a wiring layer in an opening providedin the gate insulating layer 452.

A process of manufacturing the thin film transistor 460 over thesubstrate 450 is described below with reference to FIGS. 20A to 20E.

First, the insulating layer 457 serving as a base film is formed overthe substrate 450 having an insulating surface.

In this embodiment, a silicon oxide layer is formed by a sputteringmethod as the insulating layer 457. The substrate 450 is transferredinto a treatment chamber, a sputtering gas containing high-purity oxygenin which hydrogen and moisture are removed is introduced thereinto, anda silicon target or quartz (preferably synthetic quartz) is used, sothat the silicon oxide layer is deposited as the insulating layer 457 onthe substrate 450. As the sputtering gas, oxygen or a mixed gas ofoxygen and argon can be used.

For example, a silicon oxide layer is formed by an RF sputtering methodunder the following condition: the purity of a sputtering gas is 6N;quartz (preferably, synthetic quartz) is used; the substrate temperatureis 108° C.; the distance between the substrate and the target (the T−Sdistance) is 60 mm; the pressure is 0.4 Pa; the high frequency power is1.5 kW; and the atmosphere is an atmosphere containing oxygen and argon(the flow ratio of oxygen to argon is 1:1 (each flow rate is 25 sccm)).The thickness of the silicon oxide is 100 nm. Note that instead ofquartz (preferably, synthetic quartz), a silicon target can be used as atarget used when the silicon oxide layer is formed.

In that case, the insulating layer 457 is preferably formed whileremoving moisture remaining in the treatment chamber. This is forpreventing hydrogen, hydroxyl, or moisture from being contained in theinsulating layer 457. In the treatment chamber which is evacuated with acryopump, a hydrogen atom, a compound containing a hydrogen atom such aswater (H₂O), and the like are removed, whereby the concentration of animpurity in the insulating layer 457 formed in the treatment chamber canbe reduced.

A sputtering gas used for the deposition of the insulating layer 457 ispreferably a high-purity gas in which the concentration of an impuritysuch as hydrogen, water, hydroxyl, or hydride is reduced toapproximately several parts per million (ppm) or several parts perbillion (ppb).

Further, the insulating layer 457 may have a stacked structure in whichfor example, a nitride insulating layer such as a silicon nitride layer,a silicon nitride oxide layer, an aluminum nitride layer, or an aluminumnitride oxide layer and an oxide insulating layer are stacked in thisorder from the substrate 450 side.

For example, a sputtering gas containing high-purity nitrogen, fromwhich hydrogen and moisture are removed is introduced between thesilicon oxide layer and the substrate, and a silicon target is used,whereby a silicon nitride layer is formed. Also in this case, in amanner similar to formation of the silicon oxide layer, it is preferablethat the silicon nitride layer be formed while removing residualmoisture in the treatment chamber.

Next, a conductive film is formed over the insulating layer 457. Byperformance of a first photolithography step, a resist mask is formedover the conductive film and selective etching is performed, so that thesource or drain electrode layer 465 a 1 and 465 a 2 is formed. Then, theresist mask is removed (see FIG. 20A). It seems in cross section as ifthe source or drain electrode layer 465 a 1 and 465 a 2 is divided;however, the source or drain electrode layer 465 a 1 and 465 a 2 is acontinuous film. Note that the source electrode layer and the drainelectrode layer preferably have tapered shapes in end portions becausecoverage with the gate insulating layer stacked thereover can beimproved.

As the material of the source or drain electrode layer 465 a 1 and 465 a2, there are an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W; analloy including any of the above elements; an alloy film containing acombination of any of these elements; and the like. Further, one or moreof materials selected from manganese, magnesium, zirconium, beryllium,and thorium may be used. The conductive layer may have a single-layerstructure or a stacked-layer structure of two or more layers. Forexample, a single-layer structure of an aluminum layer containingsilicon; a two-layer structure of an aluminum layer and a titanium layerstacked thereover; a three-layer structure in which a Ti layer, analuminum layer, and a Ti layer are stacked in this order; and the likecan be given. Alternatively, a layer, an alloy layer, or a nitride layerwhich contains aluminum (Al) and one or a plurality of elements selectedfrom titanium (Ti), tantalum (Ta), tungsten (W), molybdenum (Mo),chromium (Cr), neodymium (Nd), and scandium (Sc) may be used.

In this embodiment, a titanium layer is formed to a thickness of 150 nmby a sputtering method for the source or drain electrode layer 465 a 1and 465 a 2.

Next, an oxide semiconductor layer with a thickness of 2 nm to 200 nminclusive over the insulating layer 457 and the source or drainelectrode layer 465 a 1 and 465 a 2.

Next, the oxide semiconductor layer is processed into an island-shapedoxide semiconductor layer 462 in a second photolithography step (seeFIG. 20B). In this embodiment, the oxide semiconductor layer is formedby a sputtering method with use of an In—Ga—Zn—O-based metal oxidetarget.

The substrate is held in a treatment chamber kept under reducedpressure, a sputtering gas from which hydrogen and moisture are removedis introduced into the treatment chamber while removing residualmoisture in the treatment chamber, whereby the oxide semiconductor layeris deposited over the substrate 450 with the use of metal oxide as atarget. In order to remove residual moisture in the treatment chamber,an entrapment vacuum pump is preferably used. For example, a cryopump,an ion pump, or a titanium sublimation pump is preferably used. Theevacuation unit may be a turbo pump provided with a cold trap. In thetreatment chamber which is evacuated with use of the cryopump, forexample, a compound containing a hydrogen atom such as water (H₂O)(further preferably, a compound containing a carbon atom), and the likeare removed, whereby the concentration of an impurity in the oxidesemiconductor layer formed in the treatment chamber can be reduced. Thesubstrate may be heated when the oxide semiconductor layer is formed.

A sputtering gas used for the deposition of the oxide semiconductorlayer is preferably a high-purity gas in which the concentration of animpurity such as hydrogen, water, hydroxyl, or hydride is reduced toapproximately several parts per million (ppm) or several parts perbillion (ppb).

An example of the deposition condition is as follows: the substratetemperature is room temperature, the distance between the substrate andthe target is 60 mm, the pressure is 0.4 Pa, the direct current (DC)power supply is 0.5 kW, and the atmosphere is an atmosphere containingoxygen and argon (the flow ratio of oxygen to argon is 15 sccm:30 sccm).Note that when a pulse direct current (DC) power supply is used, powdersubstances (also referred to as particles or dust) generated in filmdeposition can be reduced and the film thickness is likely to beuniform. The thickness of the oxide semiconductor layer is preferably 5nm to 30 nm inclusive. Note that an appropriate thickness differsdepending on an oxide semiconductor material, and the thickness may beset as appropriate depending on the material.

In this embodiment, the oxide semiconductor layer is processed into theisland-shaped oxide semiconductor layer 462 by a wet etching method witha mixed solution of phosphoric acid, acetic acid, and nitric acid as anetchant.

Next, the oxide semiconductor layer 462 is subjected to first heattreatment. The temperature of the first heat treatment is higher than orequal to 400° C. and lower than or equal to 750° C., preferably higherthan or equal to 400° C. and lower than the strain point of thesubstrate. In this embodiment, the substrate is put in an electricfurnace which is a kind of heat treatment apparatus and heat treatmentis performed on the oxide semiconductor layer in a nitrogen atmosphereat 450° C. for one hour, and the oxide semiconductor layer is notexposed to air so that water or hydrogen is prevented from entering theoxide semiconductor layer. By the first heat treatment, the oxidesemiconductor layer 462 can be dehydrated or dehydrogenated.

Note that the heat treatment apparatus is not limited to an electronicfurnace, and may be the one provided with a device for heating an objectto be processed, using heat conduction or heat radiation from a heatingelement such as a resistance heating element. For example, a rapidthermal annealing (RTA) apparatus such as a gas rapid thermal annealing(GRTA) apparatus or a lamp rapid thermal annealing (LRTA) apparatus canbe used. For example, as the first heat treatment, GRTA by which thesubstrate is transferred into an inert gas heated to a high temperatureas high as 650° C. to 700° C., heated for several minutes, and taken outfrom the inert gas heated to the high temperature may be performed. WithGRTA, high-temperature heat treatment for a short period of time can beachieved.

Note that in the first heat treatment, it is preferable that water,hydrogen, and the like be not contained in the atmosphere of nitrogen ora rare gas such as helium, neon, or argon. It is preferable that thepurity of nitrogen or the rare gas such as helium, neon, or argon whichis introduced into a heat treatment apparatus be set to be 6N (99.9999%)or higher, preferably 7N (99.99999%) or higher (that is, the impurityconcentration is 1 ppm or lower, preferably 0.1 ppm or lower).

Depending on conditions of the first heat treatment and the material ofthe oxide semiconductor layer, the oxide semiconductor layer maycrystallize to be microcrystalline or polycrystalline.

The first heat treatment of the oxide semiconductor layer may beperformed before processing the oxide semiconductor layer intoisland-shaped oxide semiconductor layers. In that case, the substrate istaken out from the heating apparatus after the first heat treatment, andthen a photolithography step is performed.

The heat treatment for dehydration or dehydrogenation of the oxidesemiconductor layer may be performed at any of the following timings:after the oxide semiconductor layer is formed; after a source electrodeand a drain electrode are formed over the oxide semiconductor layer; andafter a gate insulating layer is formed over the source electrode andthe drain electrode.

Next, a conductive layer is formed over the insulating layer 457 and theoxide semiconductor layer 462. By performance of a thirdphotolithography step, a resist mask is formed over the conductive layerand selective etching is performed, so that the source or drainelectrode layer 465 b and the wiring layer 468 are formed. Then, theresist mask is removed (see FIG. 20C). The source or drain electrodelayer 465 b and the wiring layer 468 may be formed using a material andsteps similar to those of the source or drain electrode layer 465 a 1and 465 a 2.

In this embodiment, a titanium film is formed to a thickness of 150 nmby a sputtering method for the source or drain electrode layer 465 b andthe wiring layer 468. In this embodiment, the source or drain electrodelayer 465 a 1 and 465 a 2 is formed from the titanium film from whichthe source or drain electrode layer 465 b is formed; accordingly, theetching selectivity of the source or drain electrode layer 465 a 1 and465 a 2 is the same as or substantially the same as that of the sourceor drain electrode layer 465 b. In order to prevent the source or drainelectrode layer 465 a 1 and 465 a 2 from being etched when the source ordrain electrode layer 465 b is etched, the wiring layer 468 is providedover a portion of the source or drain electrode layer 465 a 2, which isnot covered with the oxide semiconductor layer 462. In the case of usingdifferent materials which provide high selectivity ratio of the sourceor drain electrode layer 465 b to the source or drain electrode layer465 a 1 and 465 a 2 in the etching step, the wiring layer 468 whichprotects the source or drain electrode layer 465 a 2 in etching is notnecessarily provided.

Note that materials and etching conditions are adjusted as appropriateso that the oxide semiconductor layer 462 is not removed when theconductive film is etched.

In this embodiment, a Ti layer is used as the conductive layer, anIn—Ga—Zn—O-based oxide semiconductor is used as the oxide semiconductorlayer 462, and an ammonia hydrogen peroxide solution (a mixture ofammonia, water, and a hydrogen peroxide solution) is used as an etchant.

Note that in the third photolithography step, only part of the oxidesemiconductor layer 462 is etched, whereby an oxide semiconductor layerhaving a groove (a depressed portion) might be formed. The resist maskused for forming the source or drain electrode layer 465 b and thewiring layer 468 may be formed with an ink-jet method. Formation of theresist mask by an inkjet method needs no photomask; thus, manufacturingcost can be reduced.

Next, a gate insulating layer 452 is formed over the insulating layer457, the oxide semiconductor layer 462, the source or drain electrodelayer 465 a 1 and 465 a 2, the source or drain electrode layer 465 b,and the wiring layer 468.

The gate insulating layer 452 can be a single layer or a stacked layerformed using any of a silicon oxide layer, a silicon nitride layer, asilicon oxynitride layer, a silicon nitride oxide layer, and an aluminumoxide layer, which is formed by a plasma CVD method, a sputteringmethod, or the like. In order to prevent the gate insulating layer 452from containing a large amount of hydrogen, the gate insulating layer452 is preferably formed by a sputtering method. In the case where asilicon oxide layer is formed by a sputtering method, a silicon targetor a quartz target is used as a target, and oxygen or a mixed gas ofoxygen and argon is used as a sputtering gas.

The gate insulating layer 452 may have a structure where a silicon oxidelayer and a silicon nitride layer are stacked from the side of thesource or drain electrode layer 465 a 1 and 465 a 2 and the source ordrain electrode layer 465 b. In this embodiment, a silicon oxide layeris formed to a thickness of 100 nm by an RF sputtering method under thefollowing condition: the pressure is 0.4 Pa; the high frequency power is1.5 kW; and the atmosphere is an atmosphere containing oxygen and argon(the flow ratio of oxygen to argon is 1:1 (each flow rate is 25 sccm).

Next, by performance of a fourth photolithography step, a resist mask isformed and selective etching is performed to remove part of the gateinsulating layer 452, so that an opening 423 reaching the wiring layer468 is formed (see FIG. 20D). Although not illustrated, in forming theopening 423, an opening reaching the source or drain electrode layer 465b may be formed. In this embodiment, the opening reaching the source ordrain electrode layer 465 b is formed after an interlayer insulatinglayer is further stacked, and a wiring layer for electrical connectionis formed in the opening.

Then, after a conductive layer is formed over the gate insulating layer452 and in the opening 423, the gate electrode layer 461 (461 a and 461b) and the wiring layer 464 are formed in a fifth photolithography step.Note that a resist mask may be formed by an inkjet method. Formation ofthe resist mask by an inkjet method needs no photomask; thus,manufacturing cost can be reduced.

Further, the gate electrode layer 461 (461 a and 461 b) and the wiringlayer 464 can be formed with a single-layer structure or a stacked-layerstructure using any of metal materials such as molybdenum, titanium,chromium, tantalum, tungsten, aluminum, copper, neodymium, and scandium,and an alloy material including any of these materials as a maincomponent.

In this embodiment, a titanium layer is formed to a thickness of 150 nmby a sputtering method for the gate electrode layer 461 (461 a and 461b) and the wiring layer 464.

Next, second heat treatment (preferably at 200° C. to 400° C. inclusive,for example, from 250° C. to 350° C. inclusive) is performed in an inertgas atmosphere or an oxygen gas atmosphere. In this embodiment, thesecond heat treatment is performed in a nitrogen atmosphere at 250° C.for one hour. The second heat treatment may be performed after aprotective insulating layer or a planarization insulating layer isformed over the thin film transistor 460.

Further, heat treatment may be performed at 100° C. to 200° C. inclusivefor from one hour to 30 hours in air. This heat treatment may beperformed at a fixed heating temperature. Alternatively, the followingchange in the heating temperature may be conducted plural timesrepeatedly: the heating temperature is increased from room temperatureto a temperature of 100° C. to 200° C. inclusive and then decreased toroom temperature. Further, this heat treatment may be performed underreduced pressure before formation of the oxide insulating layer. Underthe reduced pressure, the heat treatment time can be shortened.

Through the above-described process, the thin film transistor 460including the oxide semiconductor layer 462 in which the concentrationof hydrogen, moisture, hydride, or hydroxide is reduced can be formed(see FIG. 20E).

A protective insulating layer or a planarization insulating layer forplanarization may be provided over the thin film transistor 460.Although not illustrated, an opening reaching the source or drainelectrode layer 465 b may be formed in the gate insulating layer 452 andthe protective insulating layer or the planarization insulating layer,and a wiring layer for electrical connection to the source or drainelectrode layer 465 b is formed in the opening.

Moisture remaining in a reaction atmosphere is removed as describedabove in forming the oxide semiconductor layer, whereby theconcentration of hydrogen and hydride in the oxide semiconductor layercan be reduced. Therefore, the oxide semiconductor layer can bestabilized.

The above-described thin film transistor is applied to the transistorincluded in the logic circuits described in Embodiments 1 to 6, wherebyleakage of electric charges through the transistor can be suppressed. Asa result, reduction in consumed power (standby power) and suppression ofmalfunction of the logic circuit can be achieved.

Note that the contents of this embodiment or part thereof can becombined freely with the contents of other embodiments or part thereofor the content of Example or part thereof.

Embodiment 9

In this embodiment, an example of a transistor included in any of thelogic circuits described in Embodiments 1 to 6 will be described.Specifically, an example of a thin film transistor in which a channelformation region is formed using an oxide semiconductor will bedescribed.

One embodiment of a thin film transistor of this embodiment and amanufacturing method thereof are described with reference to FIGS. 21Ato 21E.

FIGS. 21A to 21E illustrate cross-sectional structures of a thin filmtransistor. A thin film transistor 390 illustrated in FIG. 21E has abottom-gate structure and is referred to as an inverted staggered thinfilm transistor.

The thin film transistor 390 is described using a single-gate thin filmtransistor; however, a multi-gate thin film transistor including aplurality of channel formation regions can be formed when needed.

Hereinafter, a process of manufacturing the thin film transistor 390over a substrate 394 is described with reference to FIGS. 21A to 21E.

First, a conductive layer is formed over the substrate 394 having aninsulating surface, and then, a gate electrode layer 391 is formed byperformance of a first photolithography step. It is preferable that anend portion of the formed gate electrode layer 391 have a tapered shapebecause coverage with a gate insulating layer stacked thereover isimproved. Note that a resist mask may be formed by an inkjet method.Formation of the resist mask by an inkjet method needs no photomask;thus, manufacturing cost can be reduced.

Although there is no particular limitation on a substrate which can beused as the substrate 394 having an insulating surface, the substrateneeds to have heat resistance high enough to withstand at least heattreatment to be performed later. A glass substrate formed using bariumborosilicate glass, aluminoborosilicate glass, or the like can be used.

In the case where the temperature at which the heat treatment is to beperformed later is high, a glass substrate whose strain point is higherthan or equal to 730° C. is preferably used. As a glass substrate, aglass material such as aluminosilicate glass, aluminoborosilicate glass,or barium borosilicate glass is used, for example. Note that morepractical glass with heat resistance can be obtained when it contains alarger amount of barium oxide (BaO) than boron oxide (B₂O₃). Therefore,a glass substrate containing more BaO than B₂O₃ is preferably used.

Note that as the above glass substrate, a substrate formed of aninsulator such as a ceramic substrate, a quartz substrate, or a sapphiresubstrate may be used. Alternatively, crystallized glass or the like maybe used. Further alternatively, a plastic substrate or the like can beused as appropriate.

An insulating layer serving as a base film may be provided between thesubstrate 394 and the gate electrode layer 391. The base film has afunction of preventing diffusion of an impurity element from thesubstrate 394, and can be formed to have a single-layer structure or astacked structure including one or more films selected from a siliconnitride layer, a silicon oxide layer, a silicon nitride oxide layer, anda silicon oxynitride layer.

The gate electrode layer 391 can be formed with a single layer or astacked layer using a metal material such as molybdenum, titanium,chromium, tantalum, tungsten, aluminum, copper, neodymium, or scandium,or an alloy material which contains any of these materials as a maincomponent.

For example, as a two-layer structure of the gate electrode layer 391, atwo-layer structure in which a molybdenum layer is stacked over analuminum layer, a two-layer structure in which a molybdenum layer isstacked over a copper layer, a two-layer structure in which a titaniumnitride layer or a tantalum nitride layer is stacked over a copperlayer, a two-layer structure in which a titanium nitride layer and amolybdenum layer are stacked, or a two-layer structure in which atungsten nitride layer and a tungsten layer are stacked is preferable.Alternatively, a three-layer structure in which a tungsten layer or atungsten nitride layer, an aluminum-silicon alloy layer or analuminum-titanium alloy layer, and a titanium nitride layer or atitanium layer are stacked is preferably used. Note that the gateelectrode layer can be formed using a light-transmitting conductivelayer. As an example of the light-transmitting conductive layer, alight-transmitting conductive oxide or the like can be given.

Then, the gate insulating layer 397 is formed over the gate electrodelayer 391.

The gate insulating layer 397 can be formed with a single-layerstructure or a stacked structure using one or more of a silicon oxidelayer, a silicon nitride layer, a silicon oxynitride layer, a siliconnitride oxide layer, and an aluminum oxide layer by a plasma CVD method,a sputtering method, or the like. In order to prevent the gateinsulating layer 397 from containing a large amount of hydrogen, thegate insulating layer 397 is preferably formed by a sputtering method.For example, in the case where a silicon oxide layer is formed by asputtering method, a silicon target or a quartz target is used as atarget, and oxygen or a mixed gas of oxygen and argon is used as asputtering gas.

The gate insulating layer 397 can have a structure in which a siliconnitride layer and a silicon oxide layer are stacked from the gateelectrode layer 391 side. For example, a gate insulating layer having athickness of 100 nm is formed in such a manner that a silicon nitridelayer (SiN_(y) (y>0)) having a thickness of 50 nm to 200 nm inclusive isformed by a sputtering method as a first gate insulating layer and thena silicon oxide layer (SiO_(x) (x>0)) having a thickness of 5 nm to 300nm inclusive is stacked as a second gate insulating layer over the firstgate insulating layer.

Further, in order for the gate insulating layer 397 and an oxidesemiconductor layer 393 to contain hydrogen, hydroxyl, or moisture aslittle as possible, it is preferable that the substrate 394 over whichthe gate insulating layer 391 is formed or the substrate 394 in a stateafter the gate insulating layer 397 is formed thereover be preheated ina preheating chamber of a sputtering apparatus as pretreatment for filmformation so that impurities such as hydrogen or moisture adsorbed tothe substrate 394 are eliminated, and then evacuation is performed. Notethat the temperature of the preheating is higher than or equal to 100°C. and lower than or equal to 400° C., preferably higher than or equalto 150° C. and lower than or equal to 300° C. As an evacuation unitprovided for the preheating chamber, a cryopump is preferably used. Notethat this preheating treatment can be omitted. Further, such preheatingtreatment may be performed with respect to the substrate 394 in a statewhere a source electrode layer 395 a and a drain electrode layer 395 bare formed before formation of an oxide insulating layer 396 in a mannersimilar to the above.

Then, the oxide semiconductor layer 393 is formed to a thickness of from2 nm to 200 nm over the gate insulating layer 397 (see FIG. 21A).

Note that before the oxide semiconductor layer 393 is formed by asputtering method, dust on a surface of the gate insulating layer 397 ispreferably removed by reverse sputtering in which an argon gas isintroduced and plasma is generated. The reverse sputtering refers to amethod in which, without application of a voltage to a target side, anRF power source is used for application of a voltage to a substrate sidein an argon atmosphere to generate plasma in the vicinity of thesubstrate to modify a surface. Note that instead of an argon atmosphere,a nitrogen atmosphere, a helium atmosphere, an oxygen atmosphere, or thelike may be used.

The oxide semiconductor layer 393 is formed by a sputtering method. Theoxide semiconductor layer 393 is formed using an In—Ga—Zn—O-based oxidesemiconductor, an In—Sn—Zn—O-based oxide semiconductor, anIn—Al—Zn—O-based oxide semiconductor, a Sn—Ga—Zn—O-based oxidesemiconductor, an Al—Ga—Zn—O-based oxide semiconductor, aSn—Al—Zn—O-based oxide semiconductor, an In—Zn—O-based oxidesemiconductor, a Sn—Zn—O-based oxide semiconductor, an Al—Zn—O-basedoxide semiconductor, an In—O-based oxide semiconductor, a Sn—O-basedoxide semiconductor, or a Zn—O-based oxide semiconductor. In thisembodiment, the oxide semiconductor layer 393 is formed by a sputteringmethod using an In—Ga—Zn—O-based metal oxide target. Further, the oxidesemiconductor layer 393 can be formed by a sputtering method in a raregas (typically argon) atmosphere, an oxygen atmosphere, or an atmosphereof a rare gas (typically argon) and oxygen. In the case of employing asputtering method, deposition may be performed with use of a targetincluding SiO₂ at 2 wt % to 10 wt %, inclusive.

As a target for forming the oxide semiconductor layer 393 by asputtering method, a metal oxide target including zinc oxide as a maincomponent can be used. As another example of the metal oxide target, ametal oxide target including In, Ga, and Zn (composition ratio:In₂O₃:Ga₂O₃:ZnO=1:1:1 [molar ratio], In:Ga:Zn=1:1:0.5 [atomic ratio])can be used. As the metal oxide target including In, Ga, and Zn, atarget having a composition ratio of In:Ga:Zn=1:1:1 [atomic ratio] or atarget having a composition ratio of In:Ga:Zn=1:1:2 [atomic ratio] canalso be used. The filling factor of the metal oxide target is 90% to100% inclusive, and preferably 95% to 99.9% inclusive. By using themetal oxide target with high filling factor, a dense oxide semiconductorlayer is formed.

The substrate is held inside a treatment chamber which is kept in areduced pressure state, and the substrate is heated to a temperaturehigher than or equal to room temperature and lower than 400° C. Then, asputtering gas from which hydrogen and moisture are removed isintroduced into the treatment chamber from which remaining moisture inthe treatment chamber is being removed, and the oxide semiconductorlayer 393 is formed over the substrate 394 with use of a metal oxide asa target. In order to remove remaining moisture in the treatmentchamber, an entrapment vacuum pump is preferably used. For example, acryopump, an ion pump, or a titanium sublimation pump is preferablyused. The evacuation unit may be a turbo pump provided with a cold trap.In the treatment chamber which is evacuated with use of the cryopump, acompound containing a hydrogen atom such as water (H₂O) (preferably acompound containing a carbon atom), and the like are removed, wherebythe impurity concentration in the oxide semiconductor layer formed inthe treatment chamber can be reduced. By film formation using asputtering method while removing moisture left in the treatment chamberwith a cryopump, the substrate temperature at the time of forming theoxide semiconductor layer 393 can be higher than or equal to roomtemperature and lower than 400° C.

As one example of the deposition condition, the distance between thesubstrate and the target is 100 mm, the pressure is 0.6 Pa, thedirect-current (DC) power supply is 0.5 kW, and the atmosphere is anoxygen atmosphere (the proportion of the oxygen flow is 100%). Note thatwhen a pulse direct current (DC) power supply is used, powder substances(also referred to as particles or dust) generated in film deposition canbe reduced and the film thickness is likely to be uniform. The thicknessof the oxide semiconductor layer is preferably 5 nm to 30 nm inclusive.Note that an appropriate thickness differs depending on an oxidesemiconductor material, and the thickness may be set as appropriatedepending on the material.

Examples of a sputtering method include an RF sputtering method in whicha high-frequency power source is used for a sputtering power supply, aDC sputtering method, and a pulsed DC sputtering method in which a biasis applied in a pulsed manner. An RF sputtering method is mainly used inthe case where an insulating layer is formed, and a DC sputtering methodis mainly used in the case where a metal layer is formed.

In addition, there is also a multi-source sputtering apparatus in whicha plurality of targets of different materials can be set. With themulti-source sputtering apparatus, layers of different materials can beformed to be stacked in the same chamber, or a film of plural kinds ofmaterials can be formed by electric discharge at the same time in thesame chamber.

Alternatively, a sputtering apparatus provided with a magnet systeminside the chamber and used for a magnetron sputtering method, or asputtering apparatus used for an ECR sputtering method in which plasmagenerated with the use of microwaves is used without using glowdischarge can be used.

Further, as a deposition method using a sputtering method, a reactivesputtering method in which a target substance and a sputtering gascomponent are chemically reacted with each other during deposition toform a thin compound film thereof, or a bias sputtering method in whicha voltage is also applied to a substrate during deposition can be used.

Then, by performance of a second photolithography step, the oxidesemiconductor layer is processed into an island-shaped oxidesemiconductor layer 399 (see FIG. 21B). Note that a resist mask used forformation of the island-shaped oxide semiconductor layer 399 may beformed by an inkjet method. Formation of the resist mask by an inkjetmethod needs no photomask; thus, manufacturing cost can be reduced.

In the case of forming a contact hole in the gate insulating layer 397,its step can be performed at the time of formation of the oxidesemiconductor layer 399.

For the etching of the oxide semiconductor layer 393, wet etching, dryetching, or both of them may be employed.

As the etching gas for dry etching, a gas containing chlorine(chlorine-based gas such as chlorine (Cl₂), boron chloride (BCl₃),silicon chloride (SiCl₄), or carbon tetrachloride (CCl₄)) is preferablyused.

Alternatively, a gas containing fluorine (fluorine-based gas such ascarbon tetrafluoride (CF₄), sulfur fluoride (SF₆), nitrogen fluoride(NF₃), or trifluoromethane (CHF₃)); hydrogen bromide (HBr); oxygen (O₂);any of these gases to which a rare gas such as helium (He) or argon (Ar)is added; or the like can be used.

As the dry etching method, a parallel plate RIE (reactive ion etching)method or an ICP (inductively coupled plasma) etching method can beused. In order to etch the layers into desired shapes, the etchingcondition (the amount of electric power applied to a coil-shapedelectrode, the amount of electric power applied to an electrode on asubstrate side, the temperature of the electrode on the substrate side,or the like) is adjusted as appropriate.

As an etchant used for wet etching, a mixed solution of phosphoric acid,acetic acid, and nitric acid, or the like can be used. In addition,ITOO7N (produced by KANTO CHEMICAL CO., INC.) may also be used.

The etchant after the wet etching is removed together with the etchedmaterials by cleaning. The waste liquid including the etchant and thematerial etched off may be purified and the material may be reused. Whena material such as indium included in the oxide semiconductor layer iscollected from the waste liquid after the etching and reused, theresources can be efficiently used and the cost can be reduced.

The etching conditions (such as an etchant, etching time, andtemperature) are appropriately adjusted depending on the material sothat the material can be etched into a desired shape.

Note that reverse sputtering is preferably performed before formation ofa conductive film in a subsequent step, so that a resist residueattached to surfaces of the oxide semiconductor layer 399 and the gateinsulating layer 397 is removed.

Next, a conductive layer is formed over the gate insulating layer 397and the oxide semiconductor layer 399. The conductive layer may beformed by a sputtering method or a vacuum evaporation method. As amaterial of the conductive layer, an element selected from Al, Cr, Cu,Ta, Ti, Mo, and W; an alloy containing any of these elements as acomponent; an alloy layer containing any of these elements incombination; and the like can be given. Further, one or more ofmaterials selected from manganese, magnesium, zirconium, beryllium, andthorium may be used. The metal conductive layer may have a single-layerstructure or a stacked-layer structure of two or more layers. Forexample, a single-layer structure of an aluminum layer includingsilicon, a two-layer structure of an aluminum layer and a titanium layerstacked thereover, a three-layer structure in which a Ti layer, analuminum layer, and a Ti layer are stacked in this order, and the likecan be given. Alternatively, a layer, an alloy layer, or a nitride layerwhich contains aluminum (Al) and one or a plurality of elements selectedfrom titanium (Ti), tantalum (Ta), tungsten (W), molybdenum (Mo),chromium (Cr), neodymium (Nd), and scandium (Sc) may be used.

By performance of a third photolithography step, a resist mask is formedover the conductive layer, and the resist mask is selectively etched, sothat a source electrode layer 395 a and a drain electrode layer 395 bare formed. Then, the resist mask is removed (see FIG. 21C).

For exposures for making the resist mask, ultraviolet rays, a KrF laserbeam, or an ArF laser beam is preferably used. The channel length (L) ofa thin film transistor to be formed later is determined by the distancebetween the bottom portion of the source electrode layer 395 a and thebottom portion of the drain electrode layer 395 b which are adjacent toeach other over the oxide semiconductor layer 399. In the case where thechannel length (L) is shorter than 25 nm, exposure for making a mask inthe third photolithography step is performed with use of extremeultraviolet with extremely short wavelengths of several nanometers toseveral tens of nanometers. Exposure with extreme ultraviolet yieldshigh resolution and a great depth of focus. Therefore, the channellength (L) of the transistor, which is formed later, can be from 10 nmto 1000 nm inclusive, and thus the operation rate of the circuit can beincreased. In addition, the off current value is extremely small; thus,lower power consumption can be achieved.

Materials of the layers and etching conditions are adjusted asappropriate so that the oxide semiconductor layer 399 is not removed inetching of the conductive layer.

In this embodiment, a Ti layer is used as the conductive film, anIn—Ga—Zn—O-based oxide semiconductor is used as the oxide semiconductorlayer 399, and an ammonia hydrogen peroxide solution (a mixture ofammonia, water, and a hydrogen peroxide solution) is used as an etchant.

In the third photolithography step, only part of the oxide semiconductorlayer 399 may be etched off, whereby an oxide semiconductor layer havinga groove (a depressed portion) may be formed. Note that a resist maskused for forming the source electrode layer 395 a and the drainelectrode layer 395 b may be formed by an inkjet method. Formation ofthe resist mask by an inkjet method needs no photomask; thus,manufacturing cost can be reduced.

In order to reduce the number of photomasks used in a photolithographystep and reduce the number of photolithography steps, an etching stepmay be performed with use of a multi-tone mask which is a light-exposuremask through which light is transmitted to have a plurality ofintensities. A resist mask formed with use of a multi-tone mask has aplurality of thicknesses and further can be changed in shape by etching;therefore, such a resist mask can be used in a plurality of etchingsteps for processing into different patterns. Therefore, a resist maskcorresponding to at least two kinds or more of different patterns can beformed by one multi-tone mask. Thus, the number of light-exposure maskscan be reduced and the number of corresponding photolithography stepscan be also reduced, whereby simplification of a process can berealized.

Plasma treatment using a gas such as N₂O, N₂, or Ar may be performed toremove water or the like adsorbed on a surface of the oxidesemiconductor layer which is exposed. Plasma treatment may be performedusing a mixture gas of oxygen and argon.

In the case of performing plasma treatment, an oxide insulating layer396 in contact with part of the oxide semiconductor layer is formedwithout being exposed to air (see FIG. 21D). In this embodiment, theoxide insulating layer 396 is formed in contact with the oxidesemiconductor layer 399 in a region where the oxide semiconductor layer399 is overlapped with neither the source electrode layer 395 a nor thedrain electrode layer 395 b.

In this embodiment, the substrate 394 over which layers such as theisland-shaped oxide semiconductor layer 399, the source electrode layer395 a, and the drain electrode layer 395 b are formed is heated to atemperature higher than or equal to room temperature and lower than 100°C., and a sputtering gas containing high-purity oxygen in which hydrogenand moisture are removed is introduced, so that a silicon oxide layerincluding a defect is formed as the oxide insulating layer 396 with useof a silicon target.

For example, a silicon oxide layer is formed by a pulsed DC sputteringmethod, in which a silicon target doped with boron and having a purityof 6N (99.9999%) (resistivity: 0.01 Ωcm) is used, the distance betweenthe target and the substrate (T−S distance) is 89 mm, the pressure is0.4 Pa, the direct current (DC) power supply is 6 kW, and an atmosphereis an oxygen atmosphere (the proportion of the oxygen flow is 100%). Thethickness thereof is 300 nm. Instead of the silicon target, quartz(preferably, synthetic quartz) can be used as the target for forming thesilicon oxide layer. As the sputtering gas, oxygen or a mixed gas ofoxygen and argon is used.

In this case, it is preferable that the oxide insulating layer 396 beformed while removing residual moisture in the treatment chamber. Thisis because hydrogen, hydroxyl, or moisture is prevented from beingincluded in the oxide semiconductor layer 399 and the oxide insulatinglayer 396.

In order to remove residual moisture in the treatment chamber, anentrapment vacuum pump is preferably used. For example, a cryopump, anion pump, or a titanium sublimation pump is preferably used. Theevacuation unit may be a turbo pump provided with a cold trap. In thetreatment chamber which is evacuated with the cryopump, a compoundcontaining a hydrogen atom such as water (H₂O) (preferably, a compoundcontaining a carbon atom), and the like are removed, whereby theconcentration of an impurity in the oxide insulating layer 396 formed inthe treatment chamber can be reduced.

Instead of the silicon oxide layer, a silicon oxynitride layer, analuminum oxide layer, an aluminum oxynitride layer, or the like can beused as the oxide insulating layer 396.

Furthermore, heat treatment may be performed at a temperature of 100° C.to 400° C. under such a condition that the oxide insulating layer 396and the oxide semiconductor layer 399 are in contact with each other.Since the oxide insulating layer 396 includes many defects in thisembodiment, an impurity such as hydrogen, moisture, hydroxyl, or hydrideincluded in the oxide semiconductor layer 399 is diffused into the oxideinsulating layer 396 by heat treatment, so that the impurity in theoxide semiconductor layer 399 can be further reduced.

Through the above-described steps, the thin film transistor 390including an oxide semiconductor layer 392 in which the concentration ofhydrogen, moisture, hydroxyl, or hydride is reduced can be formed (seeFIG. 21E).

When residual moisture in the reaction atmosphere is removed at the timeof the above-described formation of the oxide semiconductor layer, theconcentration of hydrogen and hydride in the oxide semiconductor layercan be reduced. Accordingly, the oxide semiconductor layer can bestabilized.

A protective insulating layer may be provided over the oxide insulatinglayer. In this embodiment, a protective insulating layer 398 is formedover the oxide insulating layer 396. As the protective insulating layer398, a silicon nitride layer, a silicon nitride oxide layer, an aluminumnitride layer, an aluminum nitride oxide layer, or the like is used.

As the protective insulating layer 398, a silicon nitride layer isformed by heating the substrate 394 after the oxide insulating layer 396is formed, to a temperature of 100° C. to 400° C., introducing asputtering gas containing high-purity nitrogen from which hydrogen andmoisture are removed, and using a silicon target. In this case also, itis preferable that residual moisture be removed from the treatmentchamber in the formation of the protective insulating layer 398 in amanner similar to that of the oxide insulating layer 396.

In the case of forming the protective insulating layer 398, thesubstrate 394 is heated to a temperature of 100° C. to 400° C. at thetime of formation of the protective insulating layer 398, wherebyhydrogen or moisture included in the oxide semiconductor layer can bediffused into the oxide insulating layer. In this case, heat treatmentis not necessarily performed after formation of the oxide insulatinglayer 396.

In the case where the silicon oxide layer as the oxide insulating layer396 and a silicon nitride layer as the protective insulating layer 398are stacked, the silicon oxide layer and the silicon nitride layer canbe formed in the same treatment chamber using a common silicon target.First, a sputtering gas containing oxygen is introduced and a siliconoxide layer is formed using a silicon target placed inside the treatmentchamber, and then the sputtering gas is switched to a sputtering gascontaining nitrogen and a silicon nitride layer is formed using the samesilicon target. Since the silicon oxide layer and the silicon nitridelayer can be formed in succession without exposure to air, an impuritysuch as hydrogen or moisture can be prevented from being adsorbed on asurface of the silicon oxide layer. In this case, after the siliconoxide layer as the oxide insulating layer 396 and the silicon nitridelayer as the protective insulating layer 398 are stacked, heat treatment(at a temperature of 100° C. to 400° C.) for diffusing hydrogen ormoisture included in the oxide semiconductor layer into the oxideinsulating layer may be performed.

After the formation of the protective insulating layer, heat treatmentmay be further performed at 100° C. to 200° C. inclusive in air for 1hour to 30 hours inclusive. This heat treatment may be performed at afixed heating temperature. Alternatively, the following change in theheating temperature may be conducted plural times repeatedly: theheating temperature is increased from room temperature to a temperatureof 100° C. to 200° C. inclusive and then decreased to room temperature.Further, this heat treatment may be performed under reduced pressurebefore formation of the oxide insulating layer. Under the reducedpressure, the heat treatment time can be shortened. With this heattreatment, a normally-off thin film transistor can be obtained.Therefore, reliability of the semiconductor device can be improved.

When residual moisture in the reaction atmosphere is removed at the timeof the formation of the oxide semiconductor layer, in which a channelformation region is to be formed, over the gate insulating layer, theconcentration of hydrogen or hydride in the oxide semiconductor layercan be reduced.

The above steps can be used for manufacture of a liquid crystal displaypanel, an electroluminescence display panel, and a backplane (asubstrate over which a thin film transistor is formed) of a displaydevice using electronic ink. The above steps are performed at 400° C. orlower; therefore, the above steps can be applied to a manufacturingprocess in which a glass substrate having a thickness of 1 mm or smallerand having a side that is longer than 1 m is used. All the above stepscan be performed at 400° C. or lower; thus, a large amount of energy isnot needed for manufacturing a display panel.

The above-described thin film transistor is applied to the transistorincluded in the logic circuits described in Embodiments 1 to 6, wherebyleakage of electric charges through the transistor can be suppressed. Asa result, reduction in consumed power (standby power) and suppression ofmalfunction of the logic circuit can be achieved.

Note that the contents of this embodiment or part thereof can becombined freely with the contents of other embodiments or part thereofor the content of Example or part thereof.

Embodiment 10

In this embodiment, an example of a transistor included in any of thelogic circuits described in Embodiments 1 to 6 will be described.Specifically, an example of a thin film transistor in which a channelformation region is formed using an oxide semiconductor will bedescribed.

An embodiment of a thin film transistor of this embodiment and amanufacturing method thereof will be described with reference to FIGS.22A to 22D.

FIGS. 22A to 22D illustrate an example of a cross-sectional structure ofa thin film transistor. A thin film transistor 360 illustrated in FIG.22D is a kind of bottom-gate structure called a channel-protective type(channel-stop type) and is also called an inverted staggered thin filmtransistor.

The thin film transistor 360 is described using a single-gate thin filmtransistor; however, a multi-gate thin film transistor including aplurality of channel formation regions can be formed when needed.

Hereinafter, a process of manufacturing the thin film transistor 360over a substrate 320 with reference to FIGS. 22A to 22D.

First, a conductive layer is formed over the substrate 320 having aninsulating surface, and then, by performance of a first photolithographystep, a gate electrode layer 361 is formed. Note that a resist mask maybe formed by an inkjet method. Formation of the resist mask by an inkjetmethod needs no photomask; thus, manufacturing cost can be reduced.

The gate electrode layer 361 can be formed to have a single-layer orstacked-layer structure using a metal material such as molybdenum,titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, andscandium, or an alloy material which contains any of these materials asits main component.

Next, a gate insulating layer 322 is formed over the gate electrodelayer 361.

In this embodiment, a silicon oxynitride layer is formed to a thicknessof 100 nm or smaller by a plasma CVD method as the gate insulating layer322.

Next, an oxide semiconductor layer is formed over the gate insulatinglayer 322 to have a thickness of from 2 nm to 200 nm and is processedinto an island-shaped oxide semiconductor layer by a secondphotolithography step. In this embodiment, the oxide semiconductor layeris formed using an In—Ga—Zn—O based metal oxide target by a sputteringmethod.

In this case, it is preferable that the oxide semiconductor layer beformed while removing residual moisture in a treatment chamber. This isbecause hydrogen, hydroxyl, or moisture is prevented from being includedin the oxide semiconductor layer.

In order to remove residual moisture in the treatment chamber, anentrapment vacuum pump is preferably used. For example, a cryopump, anion pump, or a titanium sublimation pump is preferably used. Theevacuation unit may be a turbo pump provided with a cold trap. In thetreatment chamber which is evacuated with use of the cryopump, acompound containing a hydrogen atom such as water (H₂O), and the likeare removed, whereby the impurity concentration in the oxidesemiconductor layer formed in the treatment chamber can be reduced.

A sputtering gas used for the deposition of the oxide semiconductorlayer is preferably a high-purity gas in which the concentration of animpurity such as hydrogen, water, hydroxyl, or hydride is reduced toapproximately several parts per million (ppm) or approximately severalparts per billion (ppb).

Next, dehydration or dehydrogenation of the oxide semiconductor layersis performed. The temperature of first heat treatment for dehydration ordehydrogenation is higher than or equal to 400° C. and lower than orequal to 750° C., preferably higher than or equal to 400° C. and lowerthan the strain point of the substrate. Here, the substrate isintroduced into an electric furnace which is one of heat treatmentapparatuses, heat treatment is performed with respect to the oxidesemiconductor layer in a nitrogen atmosphere at 450° C. for one hour,and then, the oxide semiconductor layer is not exposed to air so thatentry of water and hydrogen into the oxide semiconductor layer isprevented; thus, an oxide semiconductor layer 332 is obtained (see FIG.22A).

Next, plasma treatment is performed using a gas such as N₂O, N₂, or Ar.By this plasma treatment, adsorbed water and the like attached to anexposed surface of the oxide semiconductor layer are removed. Plasmatreatment may be performed using a mixed gas of oxygen and argon aswell.

Next, an oxide insulating layer is formed over the gate insulating layer322 and the oxide semiconductor layer 332. After that, by performance ofa third photolithography step, a resist mask is formed, and the oxideinsulating layer is selectively etched to form an oxide insulating layer366. Then, the resist mask is removed.

In this embodiment, as the oxide insulating layer 366, a 200-nm-thicksilicon oxide layer is deposited by a sputtering method. The substratetemperature in deposition may be higher than or equal to roomtemperature and lower than or equal to 300° C. and in this embodiment,is 100° C. The silicon oxide layer can be formed by a sputtering methodin an atmosphere of a rare gas (typically, argon), an oxygen atmosphere,or a mixed atmosphere containing a rare gas (typically, argon) andoxygen. As a target, a silicon oxide target or a silicon target may beused. For example, the silicon oxide layer can be formed by a sputteringmethod using a silicon target in an atmosphere of oxygen and nitrogen.

In this case, it is preferable that the oxide insulating layer 366 beformed while removing residual moisture in the treatment chamber. Thisis because hydrogen, hydroxyl, or moisture is prevented from beingincluded in the oxide semiconductor layer 332 and the oxide insulatinglayer 366.

In order to remove residual moisture in the treatment chamber, anentrapment vacuum pump is preferably used. For example, a cryopump, anion pump, or a titanium sublimation pump is preferably used. Theevacuation unit may be a turbo pump provided with a cold trap. In thetreatment chamber which is evacuated with use of the cryopump, acompound containing a hydrogen atom such as water (H₂O), and the likeare removed, whereby the impurity concentration in the oxide insulatinglayer 366 formed in the treatment chamber can be reduced.

A sputtering gas used for the deposition of the oxide insulating layer366 is preferably a high-purity gas in which the concentration of animpurity such as hydrogen, water, hydroxyl, or hydride is reduced toapproximately several parts per million (ppm) or approximately severalparts per billion (ppb).

Next, second heat treatment may be performed in an inert gas atmosphereor an oxygen gas atmosphere (preferably at a temperature higher than orequal to 200° C. and lower than or equal to 400° C., for example atemperature higher than or equal to 250° C. and lower than or equal to350° C.). For example, the second heat treatment is performed in anitrogen atmosphere at 250° C. for one hour. When the second heattreatment is performed, heat is applied under such a condition that partof the oxide semiconductor layer (a channel formation region) is incontact with the oxide insulating layer 366.

In this embodiment, the oxide semiconductor layer 332 which is providedwith the oxide insulating layer 336 and is partly exposed is furthersubjected to heat treatment in a nitrogen atmosphere or an inert gasatmosphere or under reduced pressure. By the heat treatment in anitrogen atmosphere or an inert gas atmosphere or under reducedpressure, the exposed region of the oxide semiconductor layer 332, whichis not covered with the oxide insulating layer 336 is in anoxygen-deficient state and has reduced resistance. That is, an n-typeoxide semiconductor layer is provided. For example, heat treatment isperformed at 250° C. in a nitrogen atmosphere for one hour.

With the heat treatment for the oxide semiconductor layer 332 providedwith the oxide insulating layer 366 in a nitrogen atmosphere, theresistance of the exposed region of the oxide semiconductor layer 332 isreduced. Thus, an oxide semiconductor layer 362 including regions withdifferent resistances (indicated as a shaded region and white regions inFIG. 22B) is formed.

Next, a conductive layer is formed over the gate insulating layer 332,the oxide semiconductor layer 362, and the oxide insulating layer 366.After that, by performance of a fourth photolithography step, a resistmask is formed, and the conductive layer is selectively etched to form asource electrode layer 365 a and a drain electrode layer 365 b. Then,the resist mask is removed (see FIG. 22C).

As a material of the source electrode layer 365 a and the drainelectrode layer 365 b, an element selected from Al, Cr, Cu, Ta, Ti, Mo,and W; an alloy containing any of these elements as a component; analloy layer containing any of these elements in combination; and thelike can be given. The metal conductive layer may have a single-layerstructure or a stacked-layer structure of two or more layers.

Through the above steps, when the oxide semiconductor layer is subjectedto heat treatment for dehydration or dehydrogenation after filmformation, resistance of the oxide semiconductor layer is reduced, thatis, the oxide semiconductor layer becomes of an n-type. After that, anoxide insulating layer is formed in contact with the oxide semiconductorlayer, whereby part of the oxide semiconductor layer is to be in anoxygen-excess state selectively. As a result, a channel formation region363 which overlaps with the gate electrode layer 361 becomes an i-typeregion. At that time, a high-resistance region 364 a which has highercarrier density than at least the channel formation region 363 andoverlaps with the source electrode layer 365 a, and a high-resistanceregion 364 b which has higher carrier density than at least the channelformation region 363 and overlaps with the drain electrode layer 365 bare formed in a self-alignment manner. Through the above-describedsteps, the thin film transistor 360 is completed.

Further, heat treatment may be performed at from 100° C. to 200° C.inclusive for from one hour to 30 hours in air. In this embodiment, heattreatment is performed at 150° C. for 10 hours. This heat treatment maybe performed at a fixed heating temperature. Alternatively, thefollowing change in the heating temperature may be conducted pluraltimes repeatedly: the heating temperature is increased from roomtemperature to a temperature of 100° C. to 200° C. inclusive and thendecreased to room temperature. Further, this heat treatment may beperformed under reduced pressure before formation of the oxideinsulating layer. Under the reduced pressure, the heat treatment timecan be shortened. With such heat treatment, hydrogen is introduced fromthe oxide semiconductor layer to the oxide insulating layer; thus, anormally-off thin film transistor can be obtained. Therefore,reliability of the semiconductor device can be improved.

Note that by formation of the high-resistance drain region 364 b (andthe high-resistance source region 364 a) in the part of the oxidesemiconductor layer overlapping with the drain electrode layer 365 b(and the source electrode layer 365 a), reliability of the thin filmtransistor can be improved. Specifically, formation of thehigh-resistance drain region 364 b enables such a structure thatconductivity gradually varies from the drain electrode layer to thechannel formation region 363 via the high resistance drain region 364 b.Thus, in the case where operation is performed with the drain electrodelayer 365 b connected to a wiring for supplying a high power supplypotential VDD, the high-resistance drain region serves as a buffer, andthus local concentration of an electric field hardly occurs even if thehigh electric field is applied between the gate electrode layer 361 andthe drain electrode layer 365 b, which leads to an increase in thedielectric withstand voltage of the transistor.

A protective insulating layer 323 is formed over the source electrodelayer 365 a, the drain electrode layer 365 b, and the oxide insulatinglayer 366. In this embodiment, the protective insulating layer 323 isformed using a silicon nitride layer (see FIG. 22D).

Alternatively, an oxide insulating layer may be formed over the sourceelectrode layer 365 a, the drain electrode layer 365 b, and the oxideinsulating layer 366, and the protective insulating layer 323 may befurther stacked over the oxide insulating layer.

The above-described thin film transistor is applied to the transistorincluded in the logic circuits described in Embodiments 1 to 6, wherebyleakage of electric charges through the transistor can be suppressed. Asa result, reduction in standby power and suppression of malfunction ofthe logic circuit can be achieved.

Note that the contents of this embodiment or part thereof can becombined freely with the contents of other embodiments or part thereofor the content of Example or part thereof.

Embodiment 11

In this embodiment, examples of semiconductor devices each including thelogic circuit described in any of the above embodiments will bedescribed with reference to FIGS. 23A to 23F. Note that the logiccircuit relating to the above embodiments are integrated with anexternal circuit for operation of the logic circuit and the like andmounted on a circuit board; the logic circuit is included insemiconductor devices.

FIG. 23A illustrates a laptop computer including any of the above logiccircuit, which includes a main body 2201, a housing 2202, a displayportion 2203, a keyboard 2204, and the like.

FIG. 23B illustrates a portable information terminal device (PDA)including any of the above logic circuit, which includes a main body2211 provided with a display portion 2213, an external interface 2215,an operation button 2214, and the like. A stylus 2212 for operation isincluded as an accessory.

FIG. 23C illustrates an e-book reader 2220 as an example of anelectronic paper including any of the above logic circuit. The e-bookreader 2220 includes two housings, a housing 2221 and a housing 2223.The housings 2221 and 2223 are bound with each other by an axis portion2237, along which the e-book reader 2220 can be opened and closed. Withsuch a structure, the e-book reader 2220 can be used as paper books.

A display portion 2225 is incorporated in the housing 2221, and adisplay portion 2227 is incorporated in the housing 2223. The displayportion 2225 and the display portion 2227 may display one image ordifferent images. In the structure where the display portions displaydifferent images from each other, for example, the right display portion(the display portion 2225 in FIG. 23C) can display text and the leftdisplay portion (the display portion 2227 in FIG. 23C) can displayimages.

Further, in FIG. 23C, the housing 2221 is provided with an operationportion and the like. For example, the housing 2221 is provided with apower supply 2231, an operation key 2233, a speaker 2235, and the like.With the operation key 2223, pages can be turned. Note that a keyboard,a pointing device, or the like may also be provided on the surface ofthe housing, on which the display portion is provided. Furthermore, anexternal connection terminal (an earphone terminal, a USB terminal, aterminal that can be connected to various cables such as an AC adapterand a USB cable, or the like), a recording medium insertion portion, andthe like may be provided on the back surface or the side surface of thehousing. Further, the e-book reader 2220 may have a function of anelectronic dictionary.

The e-book reader 2220 may be configured to transmit and receive datawirelessly. Through wireless communication, desired book data or thelike can be purchased and downloaded from an electronic book server.

Note that electronic paper can be used for electronic appliances in allfields as long as they display data. For example, electronic paper canbe used for, instead of electronic book (an e-book reader), posters,advertisement in vehicles such as trains, display in a variety of cardssuch as credit cards, and so on.

FIG. 23D illustrates a mobile phone including any of the above logiccircuit, which includes two housings: a housing 2240 and a housing 2241.The housing 2241 is provided with a display panel 2242, a speaker 2243,a microphone 2244, a pointing device 2246, a camera lens 2247, anexternal connection terminal 2248, and the like. The housing 2240 isprovided with a solar cell 2249 charging of the mobile phone, anexternal memory slot 2250, and the like. An antenna is incorporated inthe housing 2241.

The display panel 2242 has a touch panel function. A plurality ofoperation keys 2245 which is displayed as images is illustrated bydashed lines in FIG. 23D. Note that the mobile phone includes a boostercircuit for increasing a voltage output from the solar cell 2249 to avoltage needed for each circuit. Further, in addition to the abovestructure, a contactless IC chip, a small memory device, or the like maybe incorporated.

The display orientation of the display panel 2242 changes as appropriatein accordance with the application mode. Further, the camera lens 2247is provided on the same surface as the display panel 2242, and thus itcan be used as a video phone. The speaker 2243 and the microphone 2224can be used for videophone calls, recording, and playing sound, etc. aswell as voice calls. Moreover, the housings 2240 and 2241 in a statewhere they are developed as illustrated in FIG. 23D can be slid so thatone is lapped over the other; therefore, the size of the portableinformation terminal can be reduced, which makes the portableinformation terminal suitable for being carried.

The external connection terminal 2248 can be connected to an AC adapteror a variety of cables such as a USB cable, which enables charging ofthe mobile phone and data communication between the mobile phone or thelike. Moreover, a larger amount of data can be saved and moved byinserting a recording medium to the external memory slot 2250. Further,in addition to the above functions, an infrared communication function,a television reception function, or the like may be provided.

FIG. 23E illustrates a digital camera including any of the above logiccircuit, which includes a main body 2261, a display portion (A) 2267, aneyepiece 2263, an operation switch 2264, a display portion (B) 2265, abattery 2266, and the like.

FIG. 23F illustrates a television set 2270 including any of the abovelogic circuit, which includes a display portion 2273 incorporated in ahousing 2271. The display portion 2273 can display images. Here, thehousing 2271 is supported by a stand 2275.

The television set 2270 can be operated by an operation switch of thehousing 2271 or a separate remote controller 2280. Channels and volumecan be controlled with an operation key 2279 of the remote controller2280 so that an image displayed on the display portion 2273 can becontrolled. Moreover, the remote controller 2280 may have a displayportion 2227 in which the information outgoing from the remotecontroller 2280 is displayed.

Note that the television set 2270 is preferably provided with areceiver, a modem, and the like. With the receiver, a general televisionbroadcast can be received. Furthermore, when the television set 2270 isconnected to a communication network by wired or wireless connection viathe modem, one-way (from a transmitter to a receiver) or two-way(between a transmitter and a receiver, between receivers, or the like)data communication can be performed.

EXAMPLE 1

In this example, measured values of off current using a test elementgroup (also referred to as a TEG) will be described below.

FIG. 24 shows initial characteristics of a thin film transistorvirtually with L/W=3 μm/10000 μm in which 200 thin film transistors eachwith L/W=3 μm/50 μm are connected in parallel. A top view is shown inFIG. 25A and a partially enlarged top view thereof is show in FIG. 25B.The region enclosed by a dotted line in FIG. 25B is a thin filmtransistor of one stage with L/W=3 μm/50 μm and Lov=1.5 μm. In order tomeasure initial characteristics of the thin film transistors, thechanging characteristics of the current between source and drain(hereinafter referred to as a drain current or Id) were measured, underthe conditions where the substrate temperature was set to roomtemperature, the voltage between source and drain (hereinafter, a drainvoltage or Vd) was set to 10 V, and the voltage between source and gate(hereinafter, a gate voltage or Vg) was changed from −20 V to +20 V. Inother words, Vg−Id characteristics were measured. Note that FIG. 24shows Vg in the range of from −20 V to +5 V.

As shown in FIG. 24, the thin film transistor having a channel width Wof 10000 μm and Vd of 1 V or 10 V has an off current of 1×10⁻¹³ [A] orlower, which is less than or equal to the resolution (100 fA) of ameasurement device (a semiconductor parameter analyzer, Agilent 4156Cmanufactured by Agilent Technologies Inc.).

A method for manufacturing the thin film transistor used for themeasurement is described.

First, a silicon nitride layer was formed as a base film over a glasssubstrate by a CVD method, and a silicon oxynitride layer was formedover the silicon nitride layer. A tungsten layer was formed as a gateelectrode layer over the silicon oxynitride layer by a sputteringmethod. Here, the gate electrode layer was formed by selectively etchingthe tungsten layer.

Then, a silicon oxynitride layer having a thickness of 100 nm was formedas a gate insulating layer over the gate electrode layer by a CVDmethod.

Then, an oxide semiconductor layer having a thickness of 50 nm wasformed over the gate insulating layer by a sputtering method using anIn—Ga—Zn—O-based oxide semiconductor target (at a molar ratio ofIn₂O₃:Ga₂O₃:ZnO=1:1:2). Here, an island-shaped oxide semiconductor layerwas formed by selectively etching the oxide semiconductor layer.

Then, first heat treatment was performed on the oxide semiconductorlayer in a nitrogen atmosphere in a clean oven at 450° C. for one hour.

Next, a titanium layer (having a thickness of 150 nm) was formed as asource electrode layer and a drain electrode layer over the oxidesemiconductor layer by a sputtering method. Here, the source electrodelayer and the drain electrode layer were formed by selective etching, sothat L/W=3 μm/10000 μm of the thin film transistor was virtuallyachieved by connecting 200 thin film transistors, in parallel, each ofwhich has a channel length L of 3 μm and a channel width W of 50 μm.

Next, a silicon oxide layer having a thickness of 300 nm was formed as aprotective insulating layer by a sputtering method so as to be incontact with the oxide semiconductor layer. The silicon oxide layerserving as a protective layer was etched selectively, whereby openingswere formed over the gate electrode layer and the source and drainelectrode layers. After that, second heat treatment was performed at250° C. for one hour in a nitrogen atmosphere.

Then, heat treatment was performed at 150° C. for 10 hours before themeasurement of Vg−Id characteristics.

Through the above process, a bottom-gate thin film transistor wasmanufactured.

The reason why the thin film transistor has an off current ofapproximately 1×10⁻¹³ [A] as shown in FIG. 24 is that the concentrationof hydrogen in the oxide semiconductor layer could be sufficientlyreduced in the above manufacturing process. The hydrogen concentrationof the oxide semiconductor was 5×10¹⁹ (atoms/cm³) or lower, preferably5×10¹⁸ (atoms/cm³) or lower, further preferably 5×10¹⁷ (atoms/cm³) orlower. Note that the hydrogen concentration in the oxide semiconductorlayer was measured by secondary ion mass spectrometry (SIMS).

Although the example of using an In—Ga—Zn—O-based oxide semiconductor isdescribed, the oxide semiconductor is not particularly limited thereto.Another oxide semiconductor material, such as an In—Sn—Zn—O-based oxidesemiconductor, a Sn—Ga—Zn—O-based oxide semiconductor, anAl—Ga—Zn—O-based oxide semiconductor, a Sn—Al—Zn—O-based oxidesemiconductor, an In—Zn—O-based oxide semiconductor, an In—Sn—O-basedoxide semiconductor, a Sn—Zn—O-based oxide semiconductor, anAl—Zn—O-based oxide semiconductor, an In—O-based oxide semiconductor, aSn—O-based oxide semiconductor, or a Zn—O-based oxide semiconductor, canalso be used. Furthermore, as an oxide semiconductor material, anIn—Al—Zn—O-based oxide semiconductor mixed with AlO_(x) of 2.5 wt % to10 wt % or an In—Zn—O-based oxide semiconductor mixed with SiO_(x) of2.5 wt % to 10 wt % can be used.

The carrier density of the oxide semiconductor layer which is measuredby a carrier measurement device is 5×10¹⁴/cm³ or lower, preferably5×10¹²/cm³ or lower, much preferably lower than or equivalent to1.45×10¹⁰/cm³ which is the intrinsic carrier density of silicon. Inother words, the carrier density of the oxide semiconductor layer can bemade as close to zero as possible.

The thin film transistor can also have a channel length L of 10 nm to1000 nm, which enables an increase in circuit operation speed, and theoff current is extremely small, which enables a further reduction inpower consumption.

In addition, in circuit design, the oxide semiconductor layer can beregarded as an insulator when the thin film transistor is in an offstate.

After that, the temperature characteristics of off current of the thinfilm transistor manufactured in this example were evaluated. Temperaturecharacteristics are important in considering the environmentalresistance, maintenance of performance, or the like of an end product inwhich the thin film transistor is used. It is to be understood that asmaller amount of change is much preferable, which increases the degreeof freedom for product designing.

For the temperature characteristics, the Vg−Id characteristics wereobtained using a constant-temperature chamber under the conditions wheresubstrates provided with thin film transistors were kept at respectiveconstant temperatures of −30° C., 0° C., 25° C., 40° C., 60° C., 80° C.,100° C., and 120° C., the drain voltage was set to 6 V, and the gatevoltage was changed from −20 V to +20V.

FIG. 26A shows Vg−Id characteristics measured at the above temperaturesand superimposed on one another, and FIG. 26B shows an enlarged view ofa range of off current enclosed by a dotted line in FIG. 26A. Therightmost curve indicated by an arrow in the graph is a curve obtainedat −30° C.; the leftmost curve is a curve obtained at 120° C.; andcurves obtained at the other temperatures are located therebetween. Thetemperature dependence of on-state currents can hardly be observed. Onthe other hand, as clearly shown also in the enlarged view of FIG. 26B,the off currents except in the vicinity of a gate voltage of 20 V arelower than or equal to 1×10⁻¹² [A], which is near the resolution of themeasurement device, at all temperatures, and the temperature dependencethereof is not observed. In other words, even at a high temperature of120° C., the off current is kept lower than or equal to 1×10⁻¹² [A], andgiven that the channel width W is 10000 μm, it can be seen that the offcurrent is significantly small.

A thin film transistor including a highly-purified oxide semiconductorshows almost no dependence of off current on temperature. This alsoresults from the fact that the oxide semiconductor has an energy gap of3 eV or more and includes very few intrinsic carriers. In addition, thesource region and the drain region are in a degenerated state, which isalso a factor for showing no temperature dependence. Operation of thethin film transistor is mainly caused by carriers which are injectedfrom the degenerated source region to the oxide semiconductor, and theabove characteristics (independence of off current on temperature) canbe explained by independence of carrier density on temperature.

When a logic circuit is formed with a thin film transistor having suchan extremely small off current, reduction in standby power orsuppression of malfunction of the logic circuit can be achieved.

This application is based on Japanese Patent Application serial no.2009-250415 filed with Japan Patent Office on Oct. 30, 2009, the entirecontents of which are hereby incorporated by reference.

EXPLANATION OF REFERENCES

10: logic circuit, 11: input terminal, 12: input terminal, 13: outputterminal, 14: main logic circuit portion, 15: transistor, 100:substrate, 102: protective layer, 104: semiconductor region, 106:element isolation insulating layer, 108 a: gate insulating layer, 108 b:insulating layer, 110 a: gate electrode layer, 110 b: electrode layer,112: insulating layer, 114 a: impurity region, 114 b: impurity region,116: channel formation region, 118: sidewall insulating layer, 120 a:high concentration impurity region, 120 b: high concentration impurityregion, 122: metal layer, 124 a: metal compound region, 124 b: metalcompound region, 126: interlayer insulating layer, 128: interlayerinsulating layer, 130 a: source electrode layer, 130 b: drain electrodelayer, 130 c: electrode layer, 132: insulating layer, 134: conductivelayer, 136 a: electrode layer, 136 b: electrode layer, 136 c: electrodelayer, 136 d: gate electrode layer, 138: gate insulating layer, 140:oxide semiconductor layer, 142 a: source electrode layer, 142 b: drainelectrode layer, 144: protective insulating layer, 146: interlayerinsulating layer, 148: conductive layer, 150 a: electrode layer, 150 b:electrode layer, 150 c: electrode layer, 150 d: electrode layer, 150 e:electrode layer, 152: insulating layer, 154 a: electrode layer, 154 b:electrode layer, 154 c: electrode layer, 154 d: electrode layer, 160:transistor, 164: transistor, 200: logic circuit, 201: AND gate, 202:flip-flop, 211: transistor, 212: transistor, 213: transistor, 214:transistor, 215: transistor, 216: transistor, 221: transistor, 222:transistor, 223: transistor, 224: transistor, 225: transistor, 231: NANDgate, 232: NAND gate, 233: NAND gate, 234: NAND gate, 241: transistor,242: transistor, 243: transistor, 244: transistor, 251: transistor, 252:transistor, 253: transistor, 320: substrate, 322: gate insulating layer,323: protective insulating layer, 332: oxide semiconductor layer, 360:thin film transistor, 361: gate electrode layer, 362: oxidesemiconductor layer, 363: channel formation region, 364 a: sourceregion, 364 b: drain region, 365 a: source electrode layer, 365 b: drainelectrode layer, 366: oxide insulating layer, 390: thin film transistor,391: gate electrode layer, 392: oxide semiconductor layer, 393: oxidesemiconductor layer, 394: substrate, 395 a: source electrode layer, 395b: drain electrode layer, 396: oxide insulating layer, 397: gateinsulating layer, 398: protective insulating layer, 399: oxidesemiconductor layer, 423: opening, 450: substrate, 452: gate insulatinglayer, 457: insulating layer, 460: thin film transistor, 461: gateelectrode layer, 461 a: gate electrode layer, 461 b: gate electrodelayer, 462: oxide semiconductor layer, 464: wiring layer, 465 a: sourceelectrode layer or drain electrode layer, 465 a 1: source electrodelayer or drain electrode layer, 465 a 2: source electrode layer or drainelectrode layer, 465 b: source electrode layer or drain electrode layer,468: wiring layer, 500: logic circuit, 501: NOR gate, 502: flip-flop,511: transistor, 512: transistor, 513: transistor, 514: transistor, 521:transistor, 522: transistor, 523: transistor, 600: logic circuit, 601:latch, 602: flip-flop, 611: transistor, 612: inverter, 613: inverter,621: transistor, 622: transistor, 631: transistor, 632: transistor, 800:logic circuit, 801: AND gate, 802: flip-flop, 803: flip-flop, 804:flip-flop, 805: flip-flop group, 900: logic circuit, 901: flip-flop,902: AND gate, 903: control portion, 904: flip-flop, 905: flip-flop,906: flip-flop, 907: flip-flop group, 2201: main body, 2202: housing,2203: display portion, 2204: keyboard, 2211: main body, 2212: stylus,2213: display portion, 2214: operation button, 2215: external interface,2220: e-book reader, 2221: housing, 2223: housing, 2225: displayportion, 2227: display portion, 2231: power supply, 2233: operation key,2235: speaker, 2237: axis portion, 2240: housing, 2241: housing, 2242:display panel, 2243: speaker, 2244: microphone, 2245: operation key,2246: pointing device, 2247: camera lens, 2248: external connectionterminal, 2249: solar cell, 2250: external memory slot, 2261: main body,2263: eyepiece, 2264: operation switch, 2265: display portion (B), 2266:battery, 2267: display portion (A), 2270: television set, 2271: housing,2273: display portion, 2275: stand, 2277: display portion, 2279:operation key, 2280: remote controller

The invention claimed is:
 1. A semiconductor device comprising: a logiccircuit comprising a first transistor, an insulating layer over thefirst transistor, and a second transistor over the insulating layer;wherein the first transistor and the second transistor are electricallyconnected to each other, wherein the second transistor comprises anoxide semiconductor layer including a channel formation region, andwherein the oxide semiconductor layer comprises crystals whose c-axis isin direction perpendicular to a surface of the oxide semiconductorlayer.
 2. The semiconductor device according to claim 1, wherein thefirst transistor is provided on a substrate comprising a semiconductormaterial.
 3. The semiconductor device according to claim 1, wherein theoxide semiconductor layer comprises indium, zinc and a metal beingdifferent from indium and zinc.
 4. The semiconductor device according toclaim 3, wherein the metal is selected from gallium, tin, and aluminum.5. The semiconductor device according to claim 1, wherein crystal whosegrain diameter is greater than or equal to 1 nm and less than or equalto 20 nm exists in the oxide semiconductor layer.
 6. A semiconductordevice comprising: a flip-flop and an AND gate electrically connected toeach other, at least one of the flip-flop and the AND gate comprising afirst transistor, an insulating layer over the first transistor, and asecond transistor over the insulating layer; wherein the firsttransistor and the second transistor are electrically connected to eachother, wherein the second transistor comprises an oxide semiconductorlayer including a channel formation region, and wherein the oxidesemiconductor layer comprises crystals whose c-axis is in directionperpendicular to a surface of the oxide semiconductor layer.
 7. Thesemiconductor device according to claim 6, wherein the first transistoris provided on a substrate comprising a semiconductor material.
 8. Thesemiconductor device according to claim 6, wherein the oxidesemiconductor layer comprises indium, zinc and a metal being differentfrom indium and zinc.
 9. The semiconductor device according to claim 8,wherein the metal is selected from gallium, tin, and aluminum.
 10. Thesemiconductor device according to claim 6, wherein crystal whose graindiameter is greater than or equal to 1 nm and less than or equal to 20nm exists in the oxide semiconductor layer.
 11. A semiconductor devicecomprising: a flip-flop and a NOR gate electrically connected to eachother, at least one of the flip-flop and the NOR gate comprising a firsttransistor, an insulating layer over the first transistor, and a secondtransistor over the insulating layer; wherein the first transistor andthe second transistor are electrically connected to each other, whereinthe second transistor comprises an oxide semiconductor layer including achannel formation region, and wherein the oxide semiconductor layercomprises crystals whose c-axis is in direction perpendicular to asurface of the oxide semiconductor layer.
 12. The semiconductor deviceaccording to claim 11, wherein the first transistor is provided on asubstrate comprising a semiconductor material.
 13. The semiconductordevice according to claim 11, wherein the oxide semiconductor layercomprises indium, zinc and a metal being different from indium and zinc.14. The semiconductor device according to claim 13, wherein the metal isselected from gallium, tin, and aluminum.
 15. The semiconductor deviceaccording to claim 11, wherein crystal whose grain diameter is greaterthan or equal to 1 nm and less than or equal to 20 nm exists in theoxide semiconductor layer.
 16. A semiconductor device comprising: aflip-flop and a latch electrically connected to each other, at least oneof the flip-flop and the latch comprising a first transistor, aninsulating layer over the first transistor, and a second transistor overthe insulating layer; wherein the first transistor and the secondtransistor are electrically connected to each other, wherein the secondtransistor comprises an oxide semiconductor layer including a channelformation region, and wherein the oxide semiconductor layer comprisescrystals whose c-axis is in direction perpendicular to a surface of theoxide semiconductor layer.
 17. The semiconductor device according toclaim 16, wherein the first transistor is provided on a substratecomprising a semiconductor material.
 18. The semiconductor deviceaccording to claim 16, wherein the oxide semiconductor layer comprisesindium, zinc and a metal being different from indium and zinc.
 19. Thesemiconductor device according to claim 18, wherein the metal isselected from gallium, tin, and aluminum.
 20. The semiconductor deviceaccording to claim 16, wherein crystal whose grain diameter is greaterthan or equal to 1 nm and less than or equal to 20 nm exists in theoxide semiconductor layer.